Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Electronic Materials Pub Date : 2025-03-06 DOI:10.1002/aelm.202400789
Alon Ascoli, Ahmet Samil Demirkol, Ioannis Messaris, Vasilis Ntinas, Dimitris Prousalis, Stefan Slesazeck, Thomas Mikolajick, Fernando Corinto, Michele Bonnin, Marco Gilli, Pier Paolo Civalleri, Ronald Tetzlaff, Leon Chua
{"title":"Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor","authors":"Alon Ascoli, Ahmet Samil Demirkol, Ioannis Messaris, Vasilis Ntinas, Dimitris Prousalis, Stefan Slesazeck, Thomas Mikolajick, Fernando Corinto, Michele Bonnin, Marco Gilli, Pier Paolo Civalleri, Ronald Tetzlaff, Leon Chua","doi":"10.1002/aelm.202400789","DOIUrl":null,"url":null,"abstract":"The Hodgkin-Huxley model is an accurate yet convoluted mathematical description of the complex nonlinear dynamics of a biological neuronal axon. Employing four degrees of freedom, three of which embodied by the sodium and potassium memristive ion channels, it is capable to capture the cascade of three fundamental bifurcations, specifically a Hopf supercritical, a Hopf subcritical, and a saddle-node limit cycle bifurcation, marking the life cycle from birth to extinction via All-to-None effect of an electrical spike, also referred to as Action Potential in the literature, across biological axon membranes under monotonic change in the net synaptic current. This paper recurs to powerful concepts from the Local Activity and Edge of Chaos Principle and to methods from Circuit Theory and Nonlinear Dynamics to design the first and simplest ever-reported electrical circuit, which, leveraging the peculiar Negative Differential Resistance effects in a volatile NbOx threshold switch from NaMLab, and including additionally just one capacitor and one DC current source in its minimal topology, undergoes the three-bifurcation cascade, emerging across the fourth-order Hodgkin-Huxley neuron model under monotonic current sweep, while requiring half the number of degrees of freedom, which reveals the promising potential of Memristors on “Edge of Chaos” for energy-efficient bio-inspired electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"67 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400789","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

The Hodgkin-Huxley model is an accurate yet convoluted mathematical description of the complex nonlinear dynamics of a biological neuronal axon. Employing four degrees of freedom, three of which embodied by the sodium and potassium memristive ion channels, it is capable to capture the cascade of three fundamental bifurcations, specifically a Hopf supercritical, a Hopf subcritical, and a saddle-node limit cycle bifurcation, marking the life cycle from birth to extinction via All-to-None effect of an electrical spike, also referred to as Action Potential in the literature, across biological axon membranes under monotonic change in the net synaptic current. This paper recurs to powerful concepts from the Local Activity and Edge of Chaos Principle and to methods from Circuit Theory and Nonlinear Dynamics to design the first and simplest ever-reported electrical circuit, which, leveraging the peculiar Negative Differential Resistance effects in a volatile NbOx threshold switch from NaMLab, and including additionally just one capacitor and one DC current source in its minimal topology, undergoes the three-bifurcation cascade, emerging across the fourth-order Hodgkin-Huxley neuron model under monotonic current sweep, while requiring half the number of degrees of freedom, which reveals the promising potential of Memristors on “Edge of Chaos” for energy-efficient bio-inspired electronics.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
求助全文
约1分钟内获得全文 去求助
来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
期刊最新文献
High-Throughput Production of Electrically Conductive Yarn (E-Yarn) for Smart Textiles Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor Ge N-Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing Encapsulated Organohydrogel Couplants for Wearable Ultrasounds Improved Magnetoresistance of Tungsten Telluride and Silver Telluride Composites
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1