Kinetic growth of Bi and Sc co-substitution on physical and photocatalytic properties of rare-earth orthoferrite NdFeO3 nanoparticles synthesized by the sol–gel method
S. Venkata Murali Mohan, E. Ramanjaneyulu, D. Ramachandran
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引用次数: 0
Abstract
The \({\text{Nd}}_{1-x}{\text{Bi}}_{x}{\text{Fe}}_{0.7}{\text{Sc}}_{0.3}{\text{O}}_{3}(x=0.1- 0.4)\) compounds were successfully synthesized using a sol–gel method. X-ray diffraction analysis revealed an average crystallite size of approximately 104 nm with a strain of 0.276 for the optimized specimen (x = 0.3) sample. Raman spectroscopy further elucidated internal structural distortions arising from fluctuations in bond distances and angles. Magnetic properties were investigated using a vibrating sample magnetometer (VSM), showing promising results with magnetic moments (Msat) upto 5.9351 emu/g, remanent magnetization (Mr) of 5.2545 emu/g and coercivity (Hc) reaching 145.21 T for the \({\text{Nd}}_{1-x}{\text{Bi}}_{x}{\text{Fe}}_{0.7}{\text{Sc}}_{0.3}{\text{O}}_{3}(x=0.1- 0.4)\) samples. Reflectance differential spectroscopy was employed to determine bandgap energies (Eg) for \({\text{Nd}}_{1-x}{\text{Bi}}_{x}{\text{Fe}}_{0.7}{\text{Sc}}_{0.3}{\text{O}}_{3}(x=0.1- 0.4)\) are 1.94 eV, 1.99 eV, 2.09 eV, 2.12 eV and 2.05 eV, respectively. The photocatalytic activity of these materials was assessed, with the \({\text{Nd}}_{1-x}{\text{Bi}}_{x}{\text{Fe}}_{0.7}{\text{Sc}}_{0.3}{\text{O}}_{3}(x=0.1- 0.4)\left(x=0.3\right)\) samples demonstrating the most effective performance in photocatalytic applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.