Thermoelectric properties of ZnO:Al as a function of temperature

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-10 DOI:10.1007/s10854-025-14493-9

Asghari Maqsood, Aamir Mahmood, Bushra Waheed, Fiaz Ahmad

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Abstract

The ZnO (99%) and Al (1%) powders were combined in a manual pellet press to form the ZnO:Al pellets, which were subsequently annealed in an oxygen atmosphere at temperatures ranging from 600 °C to 900 °C. X-ray diffraction data indicated improved crystallinity up to an annealing temperature of 700 °C because of the compensation of donor defects caused by oxygen vacancies. The quality of the crystal decreased because of further annealing, which caused oxygen atoms to diffuse into interstitial sites. The Seebeck measurements showed an increase in the values up to the annealing temperature of 700 °C, with a decrease at higher temperatures. The electrical conductivity showed a decreasing trend up to 700 °C, followed by an increase with further annealing. The observed behavior of the Seebeck coefficient and electrical conductivity with annealing temperature suggests enhanced carrier concentration and mobility. The significant improvement in thermoelectric properties can be attributed to the enhanced mobility of charge carriers.

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ZnO:Al的热电性质随温度的变化

将ZnO（99%）和Al（1%）粉末在手动压球机中结合，形成ZnO:Al颗粒，随后在600°C至900°C的氧气气氛中退火。x射线衍射数据表明，由于补偿了由氧空位引起的供体缺陷，在700℃退火温度下结晶度有所提高。由于进一步退火，晶体的质量下降，导致氧原子扩散到间隙位置。Seebeck测量表明，在退火温度达到700℃时，该数值有所增加，而在更高温度下则有所下降。在700℃时，电导率呈下降趋势，退火后电导率上升。观察到的塞贝克系数和电导率随退火温度的变化表明载流子浓度和迁移率增强。热电性能的显著改善可归因于电荷载流子迁移性的增强。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.