Suppression of Radical Cation Formation in Dopant-Free Hole-Transporting Materials to Inhibit Iodine Migration for Efficient and Stable Perovskite Solar Cells
Jiaxing Huang, Yiheng Zhang, Jing Wang, Jianbin Wang, Jie Su, Yongbo Yuan, Yonggang Min, Wanqing Cai, Yuan Li, Qifan Xue
{"title":"Suppression of Radical Cation Formation in Dopant-Free Hole-Transporting Materials to Inhibit Iodine Migration for Efficient and Stable Perovskite Solar Cells","authors":"Jiaxing Huang, Yiheng Zhang, Jing Wang, Jianbin Wang, Jie Su, Yongbo Yuan, Yonggang Min, Wanqing Cai, Yuan Li, Qifan Xue","doi":"10.1016/j.nanoen.2025.110859","DOIUrl":null,"url":null,"abstract":"Developing dopant-free hole-transporting materials (HTMs) with high hole mobilities is essential to achieve efficient and stable inorganic perovskite solar cells (PVSCs). Herein, two linear organic small molecules IDTT-EtCz and IDTT-PhCz with D–A–D’–A–D configuration were designed and synthesized via two high yield steps, and they were successfully employed as HTMs with effective defect passivation in all-inorganic PVSCs. Notably, the IDTT-PhCz exhibits a deeper highest occupied molecular orbital energy level comparing with that of IDTT-EtCz, along with the enhancement of antioxidant activity towards iodine. Interestingly, IDTT-PhCz with aromatized terminal groups showed significantly increased short contacts and higher hole mobilities than IDTT-EtCz. Furthermore, the IDTT-PhCz has been proven to possess effective surface passivation capability and appropriate energy level alignment at the hole-extraction interface, efficiently suppressing recombination loss and enhancing charge collection. Finally, CsPbI<sub>3</sub>-based PVSCs with IDTT-PhCz as dopant-free HTM achieve a champion power conversion efficiency (PCE) of 21.0%, which is one of the highest values reported thus far for all-inorganic PVSCs. The optimized unencapsulated device maintains over 90% of the initial PCE after 500<!-- --> <!-- -->hours in a glove box at 60°C in the dark, indicating superior thermal stability. Additionally, the CsPbI<sub>2</sub>Br PVSC based on IDTT-PhCz exhibits an impressive PCE of 18.0%, and a CsPbI<sub>2</sub>Br/organic tandem solar cell based on IDTT-PhCz achieves a high PCE of 25.0% (24.66% certified), which is one of the highest efficiencies among the n-i-p perovskite/organic tandem solar cells to date. Overall, this work demonstrates the superiority and generalizability of the D–A–D’–A–D-type design strategy for achieving efficient PVSCs.","PeriodicalId":394,"journal":{"name":"Nano Energy","volume":"80 1","pages":""},"PeriodicalIF":16.8000,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Energy","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.nanoen.2025.110859","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Developing dopant-free hole-transporting materials (HTMs) with high hole mobilities is essential to achieve efficient and stable inorganic perovskite solar cells (PVSCs). Herein, two linear organic small molecules IDTT-EtCz and IDTT-PhCz with D–A–D’–A–D configuration were designed and synthesized via two high yield steps, and they were successfully employed as HTMs with effective defect passivation in all-inorganic PVSCs. Notably, the IDTT-PhCz exhibits a deeper highest occupied molecular orbital energy level comparing with that of IDTT-EtCz, along with the enhancement of antioxidant activity towards iodine. Interestingly, IDTT-PhCz with aromatized terminal groups showed significantly increased short contacts and higher hole mobilities than IDTT-EtCz. Furthermore, the IDTT-PhCz has been proven to possess effective surface passivation capability and appropriate energy level alignment at the hole-extraction interface, efficiently suppressing recombination loss and enhancing charge collection. Finally, CsPbI3-based PVSCs with IDTT-PhCz as dopant-free HTM achieve a champion power conversion efficiency (PCE) of 21.0%, which is one of the highest values reported thus far for all-inorganic PVSCs. The optimized unencapsulated device maintains over 90% of the initial PCE after 500 hours in a glove box at 60°C in the dark, indicating superior thermal stability. Additionally, the CsPbI2Br PVSC based on IDTT-PhCz exhibits an impressive PCE of 18.0%, and a CsPbI2Br/organic tandem solar cell based on IDTT-PhCz achieves a high PCE of 25.0% (24.66% certified), which is one of the highest efficiencies among the n-i-p perovskite/organic tandem solar cells to date. Overall, this work demonstrates the superiority and generalizability of the D–A–D’–A–D-type design strategy for achieving efficient PVSCs.
期刊介绍:
Nano Energy is a multidisciplinary, rapid-publication forum of original peer-reviewed contributions on the science and engineering of nanomaterials and nanodevices used in all forms of energy harvesting, conversion, storage, utilization and policy. Through its mixture of articles, reviews, communications, research news, and information on key developments, Nano Energy provides a comprehensive coverage of this exciting and dynamic field which joins nanoscience and nanotechnology with energy science. The journal is relevant to all those who are interested in nanomaterials solutions to the energy problem.
Nano Energy publishes original experimental and theoretical research on all aspects of energy-related research which utilizes nanomaterials and nanotechnology. Manuscripts of four types are considered: review articles which inform readers of the latest research and advances in energy science; rapid communications which feature exciting research breakthroughs in the field; full-length articles which report comprehensive research developments; and news and opinions which comment on topical issues or express views on the developments in related fields.