Photosensitivity enhancement in Cu2O based visible light photodetector: the effect of Eu(III)

IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Optical and Quantum Electronics Pub Date : 2025-03-12 DOI:10.1007/s11082-025-08105-3
Ivan A. Svito, Evgeny Bondarenko, Eugene Streltsov, Anatoly I. Kulak, Alexander V. Mazanik
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Abstract

Cu2O films were electrochemically deposited on FTO glasses, and the simplest solid-state structures were prepared by the formation of silver contact on the surface of Cu2O film. Addition of europium nitrate to the electrodeposition electrolyte results in a few time increase of the responsivity of FTO/Cu2O/Ag structures both in the photodiode (without application of an external bias voltage) and photoresistor (with an external bias voltage) operation modes. In particular, in the self-powered mode, the photodetector prepared with the addition of Eu(III) to the electrolyte demonstrates 4-fold increase in the ampere-watt responsivity reaching 6.7 mA/W at 589 nm. At an external bias of 2 V, the ampere-watt responsivity and specific detectivity under 525 nm illumination for the Eu-modified film-based photodetector are 87.2 A/W (18-fold increase) and 3.11∙1012 cm∙Hz0.5/W (6-fold increase), respectively. The increase in photosensitivity is explained by the suppression of charge carrier recombination in the films prepared with the addition of europium, which is confirmed by the photoluminescence spectroscopy.

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Cu2O基可见光探测器的光敏增强效应:Eu(III)的作用
在FTO玻璃上电化学沉积Cu2O膜,通过在Cu2O膜表面形成银触点制备了最简单的固态结构。在电沉积电解质中加入硝酸铕,可使FTO/Cu2O/Ag结构在光电二极管(不施加外部偏置电压)和光敏电阻(施加外部偏置电压)工作模式下的响应性在短时间内提高。特别是在自供电模式下,在电解质中加入Eu(III)制备的光电探测器在589 nm处的安培-瓦响应度提高了4倍,达到6.7 mA/W。在2 V外偏置下,525 nm光照下,铕改性薄膜光电探测器的安培瓦特响应度和比探测率分别为87.2 A/W(增加18倍)和3.11∙1012 cm∙Hz0.5/W(增加6倍)。光敏性的提高是由于铕的加入抑制了载流子的复合,这一点得到了光致发光光谱的证实。图形抽象
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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