Zahra Ostovar, Hamid R. Bakhtiarizadeh, Abolfazl Safaei Bezgabadi
{"title":"Optical properties of a Si3N4 nanowaveguide and its broadband infrared spectra","authors":"Zahra Ostovar, Hamid R. Bakhtiarizadeh, Abolfazl Safaei Bezgabadi","doi":"10.1007/s11082-025-08115-1","DOIUrl":null,"url":null,"abstract":"<div><p>By calculating the optical parameters of a silicon nitride nanowaveguide, the supercontinuum spectra generated through the desired waveguide is simulated making use of the generalized nonlinear Schrödinger equation which governs the supercontinuum generation process. The dispersion coefficients for three different values of a structural parameter of the waveguide have been calculated from the reported dispersion profiles of the nanowaveguide. The pulse propagation of a sech-shaped pulse (1 kW, 30 fs) through the waveguide is simulated making use of the fourth-order Runge–Kutta method. Here, the simulated supercontinuum spectra are compared for different values of the chosen geometric parameter. At a specific geometry of the silicon nitride waveguide, an extreme spectral broadening is generated, especially in the infrared region. It can be observed that the generated supercontinuum spectra from the structure with the structural parameter <span>\\({ H_2}\\)</span> equals to 50 nm is broader than the others, which is due to the presence of multiple zero-dispersion wavelengths in its dispersion profile. The generated supercontinuum spectra cover a wavelength range of 1260–5200 nm with a flatness of 30 dB. Furthermore, the soliton dynamics through this supercontinuum process have been discussed.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 3","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08115-1","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
By calculating the optical parameters of a silicon nitride nanowaveguide, the supercontinuum spectra generated through the desired waveguide is simulated making use of the generalized nonlinear Schrödinger equation which governs the supercontinuum generation process. The dispersion coefficients for three different values of a structural parameter of the waveguide have been calculated from the reported dispersion profiles of the nanowaveguide. The pulse propagation of a sech-shaped pulse (1 kW, 30 fs) through the waveguide is simulated making use of the fourth-order Runge–Kutta method. Here, the simulated supercontinuum spectra are compared for different values of the chosen geometric parameter. At a specific geometry of the silicon nitride waveguide, an extreme spectral broadening is generated, especially in the infrared region. It can be observed that the generated supercontinuum spectra from the structure with the structural parameter \({ H_2}\) equals to 50 nm is broader than the others, which is due to the presence of multiple zero-dispersion wavelengths in its dispersion profile. The generated supercontinuum spectra cover a wavelength range of 1260–5200 nm with a flatness of 30 dB. Furthermore, the soliton dynamics through this supercontinuum process have been discussed.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.