NTC thermistor-type infrared detector with MIM structure and its enhanced blackbody responsivity

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 2025-03-11 DOI:10.1016/j.sna.2025.116464

Jiangtao Yu , Bo Yang , Jihua Liu , Wenwen Kong , Aimin Chang , Yingying Dou

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引用次数: 0

Abstract

Thin-film thermistor infrared detectors exhibit rapid response and high stability, making them extensively used in both daily life and industrial applications. In this study, an infrared thermal detector device was designed utilizing a negative temperature coefficient (NTC) thermistor film (Mn-Co-Fe-Zn-O) with an outstanding temperature coefficient of resistance (TCR) value of −4.19 %/K as the thermosensitive layer. More importantly, a metal-insulator-metal (MIM) structure of Pt/Si₃N₄/Ti was fabricated to achieve high absorption in the long-wave infrared range of 8–15 μm, as confirmed by both finite-difference time-domain (FDTD) simulations and infrared optical microscope characterization. The NTC-MIM infrared detector, incorporating Ti square arrays as the top reflective metal layer with a length of 1.5 μm, period of 3.5 μm and thickness of 300 nm, achieved an infrared absorption of 98.7 % at 8 μm and 78.5 % at 14.5 μm. Its blackbody responsivity was 83.03 V/W, an enhancement of 18.96 V/W compared to the detector without top Ti array patterns at a chopping frequency of 5 Hz, while the response time was 52.67 ms. This NTC-MIM infrared detector shows great potential for non-contact thermal detection applications.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...