{"title":"Modelling and simulation of TSV considering void and leakage defects","authors":"Chao Liu, Gang Dong, Changle Zhi, Zhangming Zhu","doi":"10.1007/s10825-025-02300-x","DOIUrl":null,"url":null,"abstract":"<div><p>Through-silicon-via (TSV) technology represents a significant advancement in the fabrication of three-dimensional (3D) integrated circuits, enabling the vertical interconnection of chips. This process results in several defects that impact the signal transmission performance of TSVs. This study establishes a unified equivalent circuit model that includes leakage defect TSV, void defect TSV, and defect-free TSV, using a distributed modelling approach. The established equivalent circuit model is then simulated, and its accuracy is confirmed by comparing the S-parameter values with those from 3D electromagnetic simulator simulations. The impact of defects on the transmission performance of TSV signals was investigated by varying the dimension of the leakage factor, the position of the leakage defects, and the voiding factor and void defect position. Additionally, the impact of the coexistence of void and leakage defects on TSV signal transmission performance is investigated.\n</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 2","pages":""},"PeriodicalIF":2.2000,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-025-02300-x","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Through-silicon-via (TSV) technology represents a significant advancement in the fabrication of three-dimensional (3D) integrated circuits, enabling the vertical interconnection of chips. This process results in several defects that impact the signal transmission performance of TSVs. This study establishes a unified equivalent circuit model that includes leakage defect TSV, void defect TSV, and defect-free TSV, using a distributed modelling approach. The established equivalent circuit model is then simulated, and its accuracy is confirmed by comparing the S-parameter values with those from 3D electromagnetic simulator simulations. The impact of defects on the transmission performance of TSV signals was investigated by varying the dimension of the leakage factor, the position of the leakage defects, and the voiding factor and void defect position. Additionally, the impact of the coexistence of void and leakage defects on TSV signal transmission performance is investigated.
期刊介绍：
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
