Single event transient (SET) for a novel step-truncated SELBOX FinFET device

Abstract

A novel FinFET structure is derived from the calibrated conventional SOI FinFET at 14 nm technology node. It is designed as a step and low truncated fin with a small opening in the box (STS-FinFET). Single event transients (SETs) of serval FinFETs are investigated, including conventional FinFET (C-FinFET), SELBOX FinFET (SELBOX-FinFET), truncated-fin SELBOX FinFET (T-FinFET), semicircular-truncated SELBOX FinFET (SEMC-FinFET). The results show that although the deposited charge is significantly increased, T-FinFET, and SEMC-FinFET, in particular STS-FinFET, can dramatically reduce the sensitivity to SET. Compared with C-FinFET, the relative decrements of the SET current peak, pulse width, collected charge and bipolar amplification coefficient for the proposed STS-FinFET are 15.91%, 52.41%, 63.78%, and 93.80%, respectively. The novel structure presents more immune to SET than the others. The reason is discussed from the synergistic effect of the small opening induced by SELBOX and the cross section derived from the step and truncated fin.