Numerical investigation of eco-friendly FASnI3 perovskite solar cells: Effects of energy band alignment and interface defect

IF 3 Q2 PHYSICS, CONDENSED MATTER Micro and Nanostructures Pub Date : 2025-07-01 Epub Date: 2025-03-13 DOI:10.1016/j.micrna.2025.208147
Chenglei Yin , Ting Gou , Junyi Li, Shuzhen Li, Minglin Zhao
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Abstract

HC(NH2)2SnI3 (FASnI3) is considered as a promising lead-free perovskite (PVK) for its wide bandgap and great temperature stability. However, Sn-based perovskites exhibit lower electron affinities than Pb-based perovskites, resulting in large band mismatch at the interfaces. The energy band alignment and defects at the interfaces play an important role in the perovskite solar cell (PSC) performance. In this simulation, we optimize the FTO/TiO2/FASnI3/PTAA/Au structure to achieve efficiently and eco-friendly FASnI3-based PSCs using SCAPS-1D, with a special focus on interface engineering. The band offsets of TiO2/FASnI3 and FASnI3/PTAA interfaces are systematically modified by changing the electron affinity values of the absorber and charge transport layers (CTLs). Additionally, the influence of defect density at the TiO2/FASnI3 and FASnI3/PTAA interface is also discussed. It is found that the efficiency of PSCs can be significantly improved by suitable energy band alignment accompanied by small spike-like band offsets and the reduction of interface defects. The initial structure is based on an experimental work with an efficiency of 2.53 %. After optimization, the device reaches the highest theoretical power conversion efficiency (PCE) of 17.92 % with fill factor (FF) of 77.79 %, open circuit voltage (Voc) of 0.93 V and short circuit current density (Jsc) of 24.81 mA/cm2.
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生态友好型FASnI3钙钛矿太阳能电池的数值研究:能带对准和界面缺陷的影响
HC(NH2)2SnI3 (FASnI3)因其宽禁带和良好的温度稳定性被认为是一种很有前途的无铅钙钛矿(PVK)。然而,锡基钙钛矿比铅基钙钛矿表现出更低的电子亲和力,导致界面处出现较大的带错配。在钙钛矿太阳能电池(PSC)中,能带对准和界面缺陷对电池性能有重要影响。在本次模拟中,我们利用SCAPS-1D优化了FTO/TiO2/FASnI3/PTAA/Au结构,以实现高效环保的基于FASnI3的psc,并特别关注界面工程。通过改变吸收层和电荷传输层(ctl)的电子亲和值,系统地改变了TiO2/FASnI3和FASnI3/PTAA界面的能带偏移。此外,还讨论了TiO2/FASnI3和FASnI3/PTAA界面缺陷密度的影响。研究发现,适当的能带对准、小的峰状能带偏移和减少界面缺陷可以显著提高聚苯二烯复合材料的效率。最初的结构是基于一个效率为2.53%的实验工作。优化后的器件理论功率转换效率(PCE)最高,为17.92%,填充系数(FF)为77.79%,开路电压(Voc)为0.93 V,短路电流密度(Jsc)为24.81 mA/cm2。
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