Probing structural and electrical properties of Ca2SnO4 with sintering temperature

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-19 DOI:10.1007/s10854-025-14532-5
Mohit Upadhyay, Shail Upadhyay
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Abstract

This study used the solid-state reaction method to prepare a series of Ca2SnO4 ceramics of the CaO–SnO2 system in the 1300–1500 °C temperature range. The effect of sintering temperature on the phase composition, unit cell, pore densification, thermal stability, dielectric properties, and DC conductivity has been studied. Further, we have studied dielectric and electrical properties in the radio frequency range (1 KHz–2 MHz) as a function of temperature (100–600 °C). It was observed that the dielectric constant has a maximum contribution of interfacial polarization. The variation in the dielectric constant value (14.26–34.88) is small as compared to the dielectric loss/dissipation factor (0.04–10.97) at 1 kHz frequency as a function of sintering temperature. The activation energy for DC conduction for the sample sintered at 1300 °C was found to be 0.88 eV, whereas for the sample sintered at 1400 °C, it was found to be 0.74 eV. The measured activation energy lies within the expected range for the movement of oxygen ion vacancies in ceramic oxides. Therefore, the decrease in activation energy observed at elevated sintering temperatures is linked to the higher concentration of oxygen vacancies. Negligible thermal expansion up to 1500 °C makes Ca2SnO4 a potential candidate for low-cost substrate applications. The oxide can also be useful for thermally stable capacitors.

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烧结温度对 Ca2SnO4 结构和电气特性的影响
本研究采用固相反应方法,在1300 ~ 1500℃温度范围内制备了一系列CaO-SnO2体系的Ca2SnO4陶瓷。研究了烧结温度对相组成、晶胞、孔致密性、热稳定性、介电性能和直流电导率的影响。此外,我们还研究了无线电频率范围(1 KHz-2 MHz)的介电和电性能与温度(100-600°C)的关系。观察到介电常数对界面极化的贡献最大。与1 kHz频率下的介电常数值(14.26-34.88)相比,介电损耗/耗散因子(0.04-10.97)随烧结温度的变化较小。1300℃烧结样品的直流传导活化能为0.88 eV,而1400℃烧结样品的直流传导活化能为0.74 eV。测定的活化能在陶瓷氧化物中氧离子空位运动的预期范围内。因此,在烧结温度升高时观察到的活化能降低与氧空位浓度升高有关。高达1500°C的可忽略不计的热膨胀使Ca2SnO4成为低成本衬底应用的潜在候选者。氧化物也可用于热稳定电容器。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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