Disorder- and Interaction-Driven Quantum Criticality in WSe2

IF 16 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY ACS Nano Pub Date : 2025-03-20 DOI:10.1021/acsnano.4c12942
Nasir Ali, Fida Ali, Hyungyu Choi, Sobia Waheed, Youqiang Huang, Fedor Nigmatulin, Zhenping Wang, Hyokwang Park, Hoseong Shin, Kwangro Lee, Faisal Ahmed, Boseok Kang, Zhipei Sun, Won Jong Yoo
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Abstract

Quantum fluctuations resulting from strong Coulomb interactions or strong disorders lead to quantum phase transitions (QPTs) in 2D materials. However, understanding of disorder- and interaction-driven QPTs remains a fundamental challenge in 2D materials owing to the presence of strong disorder and strong Coulomb interactions. Here, we study the systematic interplay of strong disorder and strong Coulomb interactions by controlling the thickness of WSe2 to elucidate the disorder- and interaction-driven metal–insulator QPTs. An observation of metal–insulator transitions (MITs) with a conductivity of ∼e2/h in thin-WSe2 agrees with the Mott–Ioffe–Regel limit, excluding bad-metal behavior; conversely, MITs with a conductivity of <e2/h demonstrate the bad-metal behavior in thick-WSe2. We observe the distinct temperature dependences of resistivity, which unveil anomalous metallic transport in WSe2. Furthermore, the emergence of the metallic glass phase (MGP) in thin-WSe2 underscores the significant role of strong disorder and strong Coulomb interactions. Contrarily, the absence of the MGP in thick-WSe2 suggests that the Coulomb interactions dominate over the disorder. Finally, the successful scaling collapse of conductivity reveals the disorder-dominated quantum criticality in thin-WSe2 and interaction-driven Mott quantum criticality in thick-WSe2. This study provides compelling evidence that thickness-dependent WSe2 could be an exciting testbed to understand anomalous metallic transport and metal–insulator QPTs in 2D materials.

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WSe2中无序和相互作用驱动的量子临界
由强库仑相互作用或强无序引起的量子涨落导致二维材料中的量子相变(QPTs)。然而,由于存在强无序和强库仑相互作用,对无序和相互作用驱动的qpt的理解仍然是二维材料中的一个基本挑战。在这里,我们通过控制WSe2的厚度来研究强无序和强库仑相互作用的系统相互作用,以阐明无序和相互作用驱动的金属绝缘体qpt。在薄wse2中观察到的电导率为~ e2/h的金属-绝缘体转变(MITs)符合Mott-Ioffe-Regel极限,不包括坏金属行为;相反,电导率为<;e2/h的MITs在厚wse2中表现出坏金属行为。我们观察到电阻率的明显温度依赖性,揭示了WSe2中的异常金属输运。此外,在薄wse2中金属玻璃相(MGP)的出现强调了强无序和强库仑相互作用的重要作用。相反,厚- wse2中MGP的缺失表明库仑相互作用在无序中占主导地位。最后,电导率的标度崩塌揭示了薄wse2中无序主导的量子临界和厚wse2中相互作用驱动的Mott量子临界。这项研究提供了令人信服的证据,证明厚度相关的WSe2可能是一个令人兴奋的测试平台,用于了解二维材料中的异常金属输移和金属绝缘体qpt。
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来源期刊
ACS Nano
ACS Nano 工程技术-材料科学:综合
CiteScore
26.00
自引率
4.10%
发文量
1627
审稿时长
1.7 months
期刊介绍: ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.
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