Thermal annealing-induced phase transition and optical property modulation of InxSe80−xTe20 thin film

Abstract

This study elucidates the impact of thermal annealing on the structural and optical properties of In_xSe_80−xTe₂₀ thin films. The thermal treatment induces a remarkable amorphous-to-polycrystalline phase transition, characterized by the emergence of InSe and InSeTe phases. Differential Scanning Calorimetry (DSC) reveals critical glass transition and crystallization temperatures, providing insights into the thermodynamics of these chalcogenide systems. X-ray diffraction analyses confirm the amorphous nature of as-deposited films and their transformation to polycrystalline structures upon annealing. Microscopic investigations demonstrate significant surface modifications upon annealing treatment, further corroborating the crystallization behavior. Optical studies unveil annealing-dependent variations in absorption coefficient, extinction coefficient, and bandgap energy, which decrease as annealing temperature increases. This comprehensive investigation not only enhances our understanding of phase transitions in metal chalcogenides but also highlights the potential of these materials for emerging technologies, particularly in the field of phase change memory and optical data storage devices.