Investigation on structural, optical, vibrational, and ferroelectric properties of lead-free (1-x)Ba(Ti0.8Zr0.2)O3-x(Ba0.7Ca0.3)TiO3 ceramics

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-24 DOI:10.1007/s10854-025-14553-0

Sasmita Otta, Rajat Kumar Das, Laxman Kand, Santosh Kumar Parida, Kamal Lochan Mohanta, Binod Kumar Roul, Bhagaban Kisan

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Abstract

The single-phase ceramic sample (1-x)Ba(Ti_0.8Zr_0.2)O₃-x(Ba_0.7Ca_0.3)TiO₃ (x = 0.4 and 0.6) was prepared using a solid-state reaction method. The prepared sample shows mixed phase of the tetragonal and rhombohedral crystal structure from XRD. The phase transition from tetragonal to rhombohedral is caused by the red shifting of the vibration B₁/E(TO₃)/E(LO₂) mode at low temperatures Raman study. Further, the permittivity and electrical conductivity values show the presence of a three-phase transition between Rhombohedral-orthorhombic around ~ 50 °C orthorhombic-tetragonal at around ~ 250 °C and tetragonal-cubic at about ~ 350 °C. The dielectrcic value ε_r = 600 for x = 0.6 and high ε_r = 980 for x = 0.4 at 500 °C at low-frequency region and obtained co-exsistence of phases for x = 0.4. The PL spectra showed indications of rhombohedral structure in the sample. So this material could be applicable for the microelectronic devices.

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无铅（1-x）Ba(Ti0.8Zr0.2)O3-x(Ba0.7Ca0.3)TiO3陶瓷的结构、光学、振动和铁电性能研究

采用固相反应法制备了单相陶瓷样品（1-x）Ba(Ti0.8Zr0.2)O3-x(Ba0.7Ca0.3)TiO3 （x = 0.4和0.6）。制备的样品在XRD上表现为四边形和菱形体的混合晶体结构。在低温拉曼研究中，由四边形到菱形的相变是由振动B1/E(TO3)/E（LO2）模式的红移引起的。此外，介电常数和电导率值表明，在~ 50°C左右存在菱面-正交、正交-四边形和~ 350°C左右的四边形-立方之间的三相转变。在500℃低频区，x = 0.6时介电值εr = 600, x = 0.4时介电值εr = 980, x = 0.4时得到相共存。发光光谱显示样品为菱形体结构。因此，该材料可用于微电子器件。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.