Effect of annealing temperature on magnetic properties of Fe-Si/BN soft magnetic composites with layered structure

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-24 DOI:10.1007/s10854-025-14632-2

Xi’an Fan, Qi Jin, Zhenjia Yang, Zhaoyang Wu, Jian Wang, Guangqiang Li, Zigui Luo

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Abstract

Fe-Si/BN soft magnetic composites (SMCs) with layered structure were prepared with flaky Fe-Si/BN powders through low-speed ball milling, molding, and annealing. Effect of annealing temperature on the microstructure and magnetic properties of the layered Fe-Si/BN SMCs was studied. The results showed that structure of the Fe-Si/BN SMCs exhibited good thermal stability. When the annealing temperature increased from 500 to 800 °C, the density of the Fe-Si/BN SMCs gradually increased, leading to gradually decreased resistivity and increased dynamic loss. In addition, the increase in annealing temperature is beneficial for eliminating residual stresses within the Fe-Si/BN SMCs, resulting in decreased hysteresis loss and significantly improved effective permeability. Nevertheless, excessively high annealing temperature at 900 °C caused sintering and bonding between the flaky Fe-Si powders, which deteriorated the magnetic properties. The layered Fe-Si/BN SMCs annealed at 800 °C exhibited good magnetic properties, such as low magnetic loss (82.7 W/kg at 50 kHz and 0.05 T) and remarkably high effective permeability (143 at 100 kHz).

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退火温度对具有层状结构的 Fe-Si/BN 软磁复合材料磁性能的影响

以片状Fe-Si/BN粉末为原料，通过低速球磨、成型和退火制备了层状结构的Fe-Si/BN软磁复合材料。研究了退火温度对层状Fe-Si/BN SMCs显微组织和磁性能的影响。结果表明，Fe-Si/BN SMCs具有良好的热稳定性。当退火温度从500℃升高到800℃时，Fe-Si/BN SMCs的密度逐渐增大，导致其电阻率逐渐降低，动态损耗增大。此外，提高退火温度有利于消除Fe-Si/BN SMCs内部的残余应力，从而降低磁滞损失，显著提高有效磁导率。然而，900℃过高的退火温度导致片状铁硅粉之间的烧结和结合，使磁性能恶化。经800℃退火的层状Fe-Si/BN SMCs具有较低的磁损耗（50 kHz和0.05 T时为82.7 W/kg）和较高的有效磁导率（100 kHz时为143 W/kg）等磁性能。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.