Microstructure regulation and dielectric performance analysis of the high-pressure sintered nano-BaTiO₃ ceramics

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-30 DOI:10.1007/s10854-025-14619-z
Jing Wang, Zhanwen Ye, Yulian Liang, Ling Zhou
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Abstract

As the miniaturization of electronic devices continues to advance, increasingly stringent demands are placed on the grain refinement of BaTiO3 (BTO) functional ceramics. In this study, a single-step high-pressure sintering process was employed to rapidly fabricate nanoscale BTO ceramics. Through precise control of temperature and pressure, the abnormal grain growth was effectively suppressed during the sintering process, successfully mitigating the cleavage damage and the dielectric loss typically associated with columnar grains. Under the optimized sintering conditions of 600 °C and 2.0 GPa for 5 min, BTO ceramics exhibited an average grain size of 168 nm, which was an increase of 77% compared to the starting powder. The dielectric constant reached 2310 and the dielectric loss was 0.06. This work provides an effective reference for the rapid fabrication and microstructural control of nanoceramics.

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高压烧结纳米batio₃陶瓷的微观结构调控及介电性能分析
随着电子器件小型化的不断推进,对BaTiO3 (BTO)功能陶瓷的晶粒细化提出了越来越严格的要求。本研究采用单步高压烧结工艺快速制备纳米级BTO陶瓷。通过精确控制温度和压力,有效抑制了烧结过程中晶粒的异常生长,成功地减轻了解理损伤和通常与柱状晶粒相关的介电损耗。在600℃、2.0 GPa、5 min的最佳烧结条件下,BTO陶瓷的平均晶粒尺寸为168 nm,比起始粉末提高了77%。介电常数达到2310,介电损耗为0.06。本研究为纳米陶瓷的快速制备和微结构控制提供了有效的参考。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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