Enhancing dielectric and ferroelectric properties of PZT(52/48) electroceramics by niobium doping

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-02 DOI:10.1007/s10854-025-14652-y
A. M. Habeeb Khan, M. Prabu, Mathew Steephan, M. Saravanan, T. K. Sreeja
{"title":"Enhancing dielectric and ferroelectric properties of PZT(52/48) electroceramics by niobium doping","authors":"A. M. Habeeb Khan,&nbsp;M. Prabu,&nbsp;Mathew Steephan,&nbsp;M. Saravanan,&nbsp;T. K. Sreeja","doi":"10.1007/s10854-025-14652-y","DOIUrl":null,"url":null,"abstract":"<div><p>Finding novel materials and compositions that exhibit a close coupling between ferroelectricity and piezoelectricity is of significant technological importance. Lead zirconate titanate (PZT) is known to benefit from niobium (Nb) doping in a number of ways. In the present study, perovskite Pb(Nb<sub>0.02</sub>(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)<sub>0.98</sub>O<sub>3</sub> ceramic material was synthesized and the effect of niobium on the dielectric and ferroelectric properties are investigated. The conventional sol–gel route was used to synthesize Pb(Nb<sub>0.02</sub>(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)<sub>0.98</sub>)O<sub>3</sub> ceramics. X-ray diffraction indicates that the perovskite PNZT ceramics exhibit a tetragonal structure free of unwanted pyrochlore phase. In addition to confirming the crystal formation at higher temperatures, simultaneous TGA/DTA analyses of the gel powder reveal endothermic and exothermic peaks that correspond to weight loss at various temperatures. Grain size of the sintered samples was found to be around 300 nm with uniform dispersion, according to SEM examination. The electrical properties of the ceramics were examined as a function of temperature (from room temperature to 500 °C) and frequency (from 100 Hz to 1 MHz) using complex impedance spectroscopy (CIS). The results of the impedance spectrum show that the maximum dielectric constant at Curie temperature is ≈1800 and it reveals that the dielectric loss increases with frequency and the dielectric constant decreases. The sample’s activation energy, which was determined to be 0.167 eV, was calculated using the slope of the Arrhenius plot of DC conductivity vs the inverse of absolute temperature. The coercive electric field (Ec) and remnant polarization (Pr) of the ferroelectric loop evaluated at room temperature were determined to be 3.69 kV/cm and 1.21 μC/cm<sup>2</sup>, respectively.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14652-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Finding novel materials and compositions that exhibit a close coupling between ferroelectricity and piezoelectricity is of significant technological importance. Lead zirconate titanate (PZT) is known to benefit from niobium (Nb) doping in a number of ways. In the present study, perovskite Pb(Nb0.02(Zr0.52Ti0.48)0.98O3 ceramic material was synthesized and the effect of niobium on the dielectric and ferroelectric properties are investigated. The conventional sol–gel route was used to synthesize Pb(Nb0.02(Zr0.52Ti0.48)0.98)O3 ceramics. X-ray diffraction indicates that the perovskite PNZT ceramics exhibit a tetragonal structure free of unwanted pyrochlore phase. In addition to confirming the crystal formation at higher temperatures, simultaneous TGA/DTA analyses of the gel powder reveal endothermic and exothermic peaks that correspond to weight loss at various temperatures. Grain size of the sintered samples was found to be around 300 nm with uniform dispersion, according to SEM examination. The electrical properties of the ceramics were examined as a function of temperature (from room temperature to 500 °C) and frequency (from 100 Hz to 1 MHz) using complex impedance spectroscopy (CIS). The results of the impedance spectrum show that the maximum dielectric constant at Curie temperature is ≈1800 and it reveals that the dielectric loss increases with frequency and the dielectric constant decreases. The sample’s activation energy, which was determined to be 0.167 eV, was calculated using the slope of the Arrhenius plot of DC conductivity vs the inverse of absolute temperature. The coercive electric field (Ec) and remnant polarization (Pr) of the ferroelectric loop evaluated at room temperature were determined to be 3.69 kV/cm and 1.21 μC/cm2, respectively.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
通过掺杂铌提高 PZT(52/48)电陶瓷的介电和铁电特性
寻找具有铁电性和压电性紧密耦合的新材料和组合物具有重要的技术意义。已知锆钛酸铅(PZT)在许多方面受益于铌(Nb)掺杂。本研究合成了钙钛矿型Pb(Nb0.02(Zr0.52Ti0.48)0.98O3陶瓷材料,研究了铌对其介电性能和铁电性能的影响。采用常规溶胶-凝胶法制备Pb(Nb0.02(Zr0.52Ti0.48)0.98)O3陶瓷。x射线衍射表明,钙钛矿PNZT陶瓷具有四方结构,没有多余的焦绿石相。除了确认在较高温度下的晶体形成外,凝胶粉末的同时TGA/DTA分析还揭示了与不同温度下的失重相对应的吸热和放热峰。通过扫描电镜观察,发现烧结样品的晶粒尺寸在300 nm左右,分散均匀。利用复阻抗谱(CIS)检测了陶瓷的电性能与温度(从室温到500°C)和频率(从100 Hz到1 MHz)的关系。阻抗谱结果表明,居里温度下的最大介电常数为≈1800,介质损耗随频率的增加而增大,介电常数随频率的增加而减小。利用直流电导率与绝对温度反比的Arrhenius图斜率计算样品的活化能为0.167 eV。室温下铁电环的矫顽力电场(Ec)和残余极化(Pr)分别为3.69 kV/cm和1.21 μC/cm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
期刊最新文献
Synthesis of ZrO2 doped BaO–TiO2–SiO2 (BTS) glass ceramics with enhanced mechanical, structural, morphological, tribological and dielectric properties for electronic applications Crystal growth, optical, thermal, dielectric and mechanical, laser damage threshold, and dielectric characterizations of a novel organic third-order nonlinear optical crystal: 2,4-Dichlorobenzoic acid 4-(Dimethylamino) Benzaldehyde (DADABA) Enhancement of optical and photo-physical properties of fluorescein dye by CdS quantum dots Effect of Bi doping level on optoelectronic functionality of CdO in Si-based heterojunctions Investigation of Co-, Ni-, and Cu-based ferrite/g-C3N4 composites for superior supercapacitor performance
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1