Multiferroic properties of La-doped BiFeO3 thin films on highly ordered pyrolytic graphite single-crystal substrates using PLD for energy storage applications
Jong Yeog Son, Ahmed I. Ali, Abeer M. Alosaimi, Reda Abdel-Hameed, Elbadawy A. Kamoun
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Abstract
La-doped Bi1.2FeO3 (BFO) thin films deposited on highly ordered pyrolytic graphite (HOPG) substrates were synthesized using pulsed laser deposition method (PLD). The impact of the lanthanum (La) doping on the leakage current, ferroelectric, magnetic, and fatigue properties of the thin films was investigated. This study explores the energy storage and multiferroic properties, focusing on the influence of incorporated La concentrations. Preferentially, (111)-oriented polycrystalline BFO thin films, particularly doped with 10 mol.% La, demonstrated superior crystallinity and exceptional ferroelectric properties. As La concentration increased, BFO thin films exhibited improved leakage current characteristics and enhanced magnetic properties. The remanent polarization of BFO thin film was approximately 23.9 μC/cm2 without La doping. However, as La doping concentration increased to 5 and 10 mol.%, it significantly improved to approximately 32.6 and 48.4 μC/cm2; respectively. Notably, BFO thin films doped with approximately 15 mol.% La achieved a maximum energy density of around 70.6 J/cm3, coupled with an energy storage efficiency of approximately 68.2% and a loss energy density of about 32.9 J/cm3. This performance enhancement is attributed to the improved ferroelectric properties and reduced leakage current enabled by La doping. Thus, the deposition of polycrystalline BFO thin films on HOPG substrates and the optimization of their energy storage properties through La doping provide promising advancements for energy storage technologies.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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