Luminescent afterglow and storage behavior in Mg2+/Sr2+-doped C12A7: Tb3+ photo-stimulate phosphors

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-05 DOI:10.1007/s10854-025-14706-1
Shengnan Li, Jian Shu, Fumin Shang, Xiao Zhang, Yi Jiang, Yu Meng, Lan Yu, Lu Liu, Rongyun Jiang
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Abstract

A series of alkaline earth ions (Mg2+/Sr2+)-doped 12CaO·7Al2O3:Tb3+ (C12A7:Tb3+) photo-stimulated luminescence (PSL) phosphors were synthesized via a combustion method combined with heat treatment. XRD Rietveld refinement parameters confirmed that the cage structure undergoes distortion after doping with alkaline earth ions. Photoluminescence (PL) and lifetime spectra indicate that doping induces nanocage distortion in C12A7. PSL spectra demonstrate that this distortion can influence the traps in C12A7:Tb3+, Mg2+ (C12A7:Tb–Mg), C12A7:Tb3+ (C12A7:Tb), and C12A7:Tb3+, Sr2+ (C12A7:Tb–Sr) phosphors. Thermoluminescence (TL) curves reveal that after the incorporation of Mg2⁺ ions, the trap depth and distribution become shallower for trap 1 and deeper for trap 2. Additionally, the half-peak width of the TL peak (trap 1) increases with the radius of the alkaline earth ions (from 45.5 to 84 K). TL curves irradiated by X-rays show that the number of trapped electrons is related to the atomic number of the doped alkaline earth ions. TL spectra at different resting times confirm that the electron trapping process involves filling shallow traps first, followed by deep traps. This study demonstrates that alkaline earth ions (Mg2+/Sr2+)-doped C12A7:Tb3+ represents a promising doping strategy for multi-responsive smart platforms. It is hoped that this work will provide new insights and guidelines for the rational design and performance optimization of electron trap materials.

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掺杂 Mg2+/Sr2+ 的 C12A7:Tb3+ 光刺激荧光粉的发光余辉和储存行为
采用燃烧与热处理相结合的方法合成了一系列碱土离子(Mg2+/Sr2+)掺杂12CaO·7Al2O3:Tb3+ (C12A7:Tb3+)光激发光(PSL)荧光粉。XRD Rietveld细化参数证实,掺杂碱土离子后,笼状结构发生畸变。光致发光(PL)和寿命光谱表明,掺杂引起C12A7的纳米笼畸变。PSL光谱表明,这种畸变会影响C12A7:Tb3+、Mg2+ (C12A7:Tb - mg)、C12A7:Tb3+ (C12A7:Tb - mg)和C12A7:Tb3+、Sr2+ (C12A7:Tb - sr)荧光粉中的陷阱。热释光(TL)曲线显示,加入Mg2 +后,陷阱1的深度和分布变浅,陷阱2的深度和分布变深。此外,TL峰(陷阱1)的半峰宽度随着碱土离子半径的增加而增加(从45.5 K增加到84 K)。x射线辐照的TL曲线表明,被捕获电子的数量与掺杂碱土离子的原子序数有关。不同静息时间的TL谱证实了电子捕获过程是先填充浅阱,然后填充深阱。本研究表明,碱土离子(Mg2+/Sr2+)掺杂C12A7:Tb3+是一种很有前途的多响应智能平台掺杂策略。希望本研究能为电子阱材料的合理设计和性能优化提供新的见解和指导。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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