Enhanced performances and in-situ microscopic domain evolution of Cu-doped (Ba0.94Ca0.06)(Zr0.05Ti0.95)O3 ceramic by high-temperature poling

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-04 DOI:10.1007/s10854-025-14722-1
Yingchun Liu, Xianghe Meng, Wenming Shi, Yuanhao Deng, Hongjun Zhang
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Abstract

The high-temperature poling strategy (110 °C, 30 kV/cm, 20 min) was imposed on Cu-doped (Ba0.94Ca0.06)(Zr0.05Ti0.95)O3 ceramics which had the Curie temperature of 117 °C, to enhance the piezoelectric performances. The high-temperature poled piezoelectric constants d33 and electromechanical coupling factors kp were 410 pC/N and 0.516, which were enhanced by 17.1% and 15.4%, respectively, higher than that of traditional poled ones. Effects of high-temperature poling on the switching characteristic between non-180° and 180° domains were verified by the intensity ratio of splitting peaks at 2θ around 45°, using the X-ray diffraction analysis. The high-temperature poled samples showed more asymmetric hysteresis loops, with higher internal bias field of 1.8 kV/cm, maximum polarization of 18.5 μC/cm2, and residual polarization of 10.7 μC/cm2, but lower coercive field of 2.5 kV/cm and smaller positive hysteresis of 1.3%. The high-field piezoelectric constant d33* showed a pronounced jump of 112.2 pm/V at 110 °C, confirming the optimal poling temperature. The stronger compensating defect dipole field mainly contributed to the asymmetry. And the tiny and easily reversible domains, observed by the in-situ piezoelectric force microscopy, were responsible to the improvement on piezoelectricity.

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通过高温极化提高掺铜 (Ba0.94Ca0.06)(Zr0.05Ti0.95)O3陶瓷的性能和原位微观畴演化
对居里温度为 117 ℃ 的铜掺杂 (Ba0.94Ca0.06)(Zr0.05Ti0.95)O3 陶瓷施加高温极化策略(110 ℃、30 kV/cm、20 分钟),以提高其压电性能。高温极化压电常数 d33 和机电耦合系数 kp 分别为 410 pC/N 和 0.516,分别比传统极化压电常数提高了 17.1% 和 15.4%。利用 X 射线衍射分析法,通过 45° 附近 2θ 处分裂峰的强度比,验证了高温极化对非 180° 和 180° 晶畴之间切换特性的影响。高温极化样品显示出更多的非对称磁滞环,具有更高的内部偏置场(1.8 kV/cm)、最大极化(18.5 μC/cm2)和残余极化(10.7 μC/cm2),但矫顽场较低(2.5 kV/cm),正磁滞较小(1.3%)。在 110 °C 时,高场压电常数 d33* 出现了 112.2 pm/V 的明显跃升,证实了最佳极化温度。较强的补偿缺陷偶极子场是造成不对称的主要原因。原位压电显微镜观察到的微小且易于逆转的畴也是压电性提高的原因。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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