{"title":"Electrochemical supercapacitor performance of MnO2 nanorods via precursor ratio and hydrothermal temperature variation","authors":"Anbazhagan Meena, Haydullakhan Saleem, Nadanasabesan Shanmugam, Annamalai Senthil Kumar, S. Suthakaran, Manikandan Ayyar","doi":"10.1007/s10854-025-14676-4","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, we detail a hydrothermal synthesis of MnO<sub>2</sub> nanorods at a temperature of 120 °C, employing different ratios of precursors. The precursors used include manganese chloride tetrahydrate and potassium permanganate with molar ratios of 1:3, 1:1, and 3:1. Thermal analysis indicated that the 1:3 precursor ratio exhibited the lowest activation energy of 40 kJ/mol, making it suitable for MnO<sub>2</sub> synthesis. Analysis through X-ray diffraction confirmed the presence of β-MnO<sub>2</sub> in all ratios studied, with the smallest crystals, measuring 7 nm, identified specifically in the 1:3 ratio. X-ray photoelectron spectroscopy analysis demonstrated that manganese in MnO<sub>2</sub> exists in an oxidation state of + 4. Moreover, we synthesized MnO<sub>2</sub> employing a 1:3 precursor ratio at hydrothermal temperatures of 150, 180, and 210 °C, and assessed the influence of the synthesis temperature on the electrochemical features. The cyclic voltammetry (CV) analysis demonstrated that the MnO<sub>2</sub> synthesized at 120 °C reached a specific capacitance of 452 F/g at a scan rate of 2 mV/s. In addition, the galvanostatic charge–discharge (GCD) analysis provided evidence of an energy density of 35 Wh/kg and a power density of 495 W/kg at a current density of 5 A/g, suggesting its substantial potential as a superior electrode material for the fabrication of supercapacitors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14676-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we detail a hydrothermal synthesis of MnO2 nanorods at a temperature of 120 °C, employing different ratios of precursors. The precursors used include manganese chloride tetrahydrate and potassium permanganate with molar ratios of 1:3, 1:1, and 3:1. Thermal analysis indicated that the 1:3 precursor ratio exhibited the lowest activation energy of 40 kJ/mol, making it suitable for MnO2 synthesis. Analysis through X-ray diffraction confirmed the presence of β-MnO2 in all ratios studied, with the smallest crystals, measuring 7 nm, identified specifically in the 1:3 ratio. X-ray photoelectron spectroscopy analysis demonstrated that manganese in MnO2 exists in an oxidation state of + 4. Moreover, we synthesized MnO2 employing a 1:3 precursor ratio at hydrothermal temperatures of 150, 180, and 210 °C, and assessed the influence of the synthesis temperature on the electrochemical features. The cyclic voltammetry (CV) analysis demonstrated that the MnO2 synthesized at 120 °C reached a specific capacitance of 452 F/g at a scan rate of 2 mV/s. In addition, the galvanostatic charge–discharge (GCD) analysis provided evidence of an energy density of 35 Wh/kg and a power density of 495 W/kg at a current density of 5 A/g, suggesting its substantial potential as a superior electrode material for the fabrication of supercapacitors.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.