Optimizing microstrip patch antennas: dielectric analysis of ZnAl2O4-based nanoceramic composites for satellite frequency bands

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-06 DOI:10.1007/s10854-025-14575-8
Srilali Siragam
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Abstract

This study focuses on gahnite (Zinc aluminate, ZnAl₂O₄)-based microwave dielectric ceramics for prototype patch antennas in the 4–12 GHz range. ZnAl₂O₄ was modified with TiO₂ and V₂O₅ to improve key properties like dielectric permittivity (εr) and dielectric loss (tan δ). X-ray Diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) confirmed the formation of a two-phase system. The dielectric permittivity values for ZA (ZnAl₂O₄), ZAT (ZnAl₂O₄TiO2), ZAV (ZnAl₂O₄V2O5), and ZAVT (ZnAl2O40.6wt%V2O50.4wt%TiO2) were 21.8, 24.9, 18.9, and 22.83, respectively, while dielectric losses were 0.050, 0.060, 0.049, and 0.058. Antenna return losses (RL), bandwidth, and voltage standing wave ratio (VSWR) were − 19.42 dB/616 MHz/1.24 (ZA), − 20.25 dB/2.57 GHz/1.23 (ZAT), − 20.73 dB/3.34 GHz/1.05 (ZAV), and − 44.69 dB/1.9 GHz/1.23 (ZAVT), demonstrating significant improvements in performance. This research highlights the role of TiO₂ and V₂O₅ in increasing crystallite and grain size, contributing to enhanced dielectric properties. The optimized composites show potential for miniaturizing wireless patch antennas, making them suitable for advanced telecommunications applications.

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微带贴片天线优化:卫星频段znal2o4基纳米陶瓷复合材料的介电分析
本研究重点研究了4-12 GHz频段贴片天线原型的gahnite(锌铝酸盐,ZnAl₂O₄)基微波介质陶瓷。ZnAl₂O₄用TiO₂和V₂O₅改性,以改善介电介电常数(εr)和介电损耗(tan δ)等关键性能。x射线衍射(XRD)和傅里叶变换红外光谱(FTIR)证实了两相体系的形成。ZnAl₂O₄、ZAT (ZnAl₂O₄TiO2)、ZAV (ZnAl₂O₄V2O5)和ZAVT (ZnAl2O40.6wt%V2O50.4wt%TiO2)的介电常数分别为21.8、24.9、18.9和22.83,介电损耗分别为0.050、0.060、0.049和0.058。天线回波损耗(RL)、带宽和电压驻波比(VSWR)分别为−19.42 dB/616 MHz/1.24 (ZA)、−20.25 dB/2.57 GHz/1.23 (ZAT)、−20.73 dB/3.34 GHz/1.05 (ZAV)和−44.69 dB/1.9 GHz/1.23 (ZAVT),性能得到显著改善。这项研究强调了TiO₂和V₂O₅在增加晶体和晶粒尺寸方面的作用,有助于增强介电性能。优化后的复合材料显示出无线贴片天线小型化的潜力,使其适用于先进的电信应用。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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