Influence of multiple MISHEMT conduction channels on its analog behavior

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2025-08-01 Epub Date: 2025-04-22 DOI:10.1016/j.sse.2025.109136

Bruno G. Canales , Bruno C.S. Sanches , Joao A. Martino , Eddy Simoen , Uthayasankaran Peralagu , Nadine Collaert , Paula G.D. Agopian

{"title":"Influence of multiple MISHEMT conduction channels on its analog behavior","authors":"Bruno G. Canales , Bruno C.S. Sanches , Joao A. Martino , Eddy Simoen , Uthayasankaran Peralagu , Nadine Collaert , Paula G.D. Agopian","doi":"10.1016/j.sse.2025.109136","DOIUrl":null,"url":null,"abstract":"<div><div>In this paper, the multiple channels of a MISHEMT device (Metal/Si<sub>3</sub>N<sub>4</sub>/AlGaN/AlN/GaN − Metal-Insulator-Semiconductor High Electron Mobility Transistor) are studied regarding their impact on fundamental DC and RF figures of merit. Although most authors treat the 2DEG channel as the MISHEMT main channel, it is shown that its MOS channel contribution to the different RF parameters is of great importance on some devices. This unique characteristic makes the MISHEMT RF parameters to be dependent on both V<sub>GS</sub> and V<sub>DS</sub>. The 2DEG channel presents a MAG value of 15 dB that is almost independent with the 2DEG channel length. In relation to a pure 2DEG conduction, the MOS channel is responsible for a large set of analog parameters improvements. It offers an increase of about 23 dB in maximum available gain (MAG), while sustaining a high f<sub>T</sub> and f<sub>max</sub> for a larger range of V<sub>GS</sub> and drain current level.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"227 ","pages":"Article 109136"},"PeriodicalIF":1.4000,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125000814","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/4/22 0:00:00","PubModel":"Epub","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

In this paper, the multiple channels of a MISHEMT device (Metal/Si₃N₄/AlGaN/AlN/GaN − Metal-Insulator-Semiconductor High Electron Mobility Transistor) are studied regarding their impact on fundamental DC and RF figures of merit. Although most authors treat the 2DEG channel as the MISHEMT main channel, it is shown that its MOS channel contribution to the different RF parameters is of great importance on some devices. This unique characteristic makes the MISHEMT RF parameters to be dependent on both V_GS and V_DS. The 2DEG channel presents a MAG value of 15 dB that is almost independent with the 2DEG channel length. In relation to a pure 2DEG conduction, the MOS channel is responsible for a large set of analog parameters improvements. It offers an increase of about 23 dB in maximum available gain (MAG), while sustaining a high f_T and f_max for a larger range of V_GS and drain current level.

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多个MISHEMT传导通道对其模拟性能的影响

本文研究了MISHEMT器件（金属/Si3N4/AlGaN/AlN/GaN−金属-绝缘体-半导体高电子迁移率晶体管）的多通道对直流和射频基本参量的影响。虽然大多数作者都将2DEG信道作为MISHEMT的主信道，但研究表明，在某些设备上，其MOS信道对不同射频参数的贡献非常重要。这种独特的特性使得MISHEMT射频参数同时依赖于VGS和VDS。2DEG通道的MAG值为15db，几乎与2DEG通道长度无关。相对于纯2DEG传导，MOS通道负责大量模拟参数的改进。它在最大可用增益（MAG）方面增加了约23 dB，同时在更大的VGS范围和漏极电流水平下保持高fT和fmax。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.