GaN-HEMT Based Very-High-Frequency AC Power Supply for Electrosurgery.

Conference proceedings. IEEE Applied Power Electronics Conference and Exposition Pub Date : 2021-06-01 Epub Date: 2021-07-21 DOI:10.1109/apec42165.2021.9487352

Congbo Bao, Sudip K Mazumder

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引用次数: 6

Abstract

To power electrosurgery, a very-high-frequency AC inverter (VHFI) is required. In this paper, a full-bridge based VHFI is proposed to enable electrosurgery. Its high-frequency output generating mechanism and the high order filter design are explained. To check the feasibility of the proposed VHFI, a 300 W Gallium Nitride High Electron Mobility Transistors (GaN HEMT) based experimental setup with 390 kHz output frequency, has been designed and implemented. Experimental efficiency and total harmonic distortion (THD) results are graphed for pure cutting mode. It turns out that maximum THD is less than 2.5% for the proposed VHFI. Further, recurring and burst experiment results are provided for blend cutting mode and coagulation mode, respectively. The experiment results show that the proposed VHFI has extreme fast-responding time for both blend cutting and coagulation mode, and crest factor is about 21 for coagulation mode. All experiment results together validate the feasibility of the proposed VHFI and also verify its capability of supporting different load values under different clinical modes.

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基于GaN-HEMT的电外科甚高频交流电源。

为了给电外科手术供电，需要一个高频交流逆变器(VHFI)。本文提出了一种基于全桥的VHFI来实现电外科手术。介绍了其高频输出产生机理和高阶滤波器的设计。为了验证所提出的VHFI的可行性，设计并实现了一个基于300 W氮化镓高电子迁移率晶体管(GaN HEMT)的实验装置，输出频率为390 kHz。给出了纯切削模式下的实验效率和总谐波畸变(THD)结果。结果表明，建议的VHFI的最大THD小于2.5%。此外，给出了混合切割模式和混凝模式下的重复和突发实验结果。实验结果表明，所提出的VHFI在混合切割和混凝模式下都具有极快的响应时间，混凝模式下的峰值因子约为21。所有实验结果共同验证了所提出的VHFI的可行性，也验证了其在不同临床模式下支持不同负荷值的能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference proceedings. IEEE Applied Power Electronics Conference and Exposition

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