Dual-mode Microelectrode Array Featuring 20k Electrodes and High SNR for Extracellular Recording of Neural Networks.

Xinyue Yuan, Vishalini Emmenegger, Marie Engelene J Obien, Andreas Hierlemann, Urs Frey
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Abstract

In recent electrophysiological studies, CMOS-based high-density microelectrode arrays (HD-MEA) have been widely used for studies of both in-vitro and in-vivo neuronal signals and network behavior. Yet, an open issue in MEA design concerns the tradeoff between signal-to-noise ratio (SNR) and number of readout channels. Here we present a new HD-MEA design in 0.18 μm CMOS technology, consisting of 19,584 electrodes at a pitch of 18.0 μm. By combing two readout structures, namely active-pixel-sensor (APS) and switch-matrix (SM) on a single chip, the dual-mode HD-MEA is capable of recording simultaneously from the entire array and achieving high signal-to-noise-ratio recordings on a subset of electrodes. The APS readout circuits feature a noise level of 10.9 μVrms for the action potential band (300 Hz - 5 kHz), while the noise level for the switch-matrix readout is 3.1 μVrms.

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双模微电极阵列,具有20k电极和高信噪比,用于神经网络的细胞外记录。
在最近的电生理学研究中,基于CMOS的高密度微电极阵列(HD-MEA)已被广泛用于体外和体内神经元信号和网络行为的研究。然而,MEA设计中的一个悬而未决的问题涉及信噪比(SNR)和读出通道数量之间的权衡。在这里,我们提出了一种采用0.18μm CMOS技术的新型HD-MEA设计,由间距为18.0μm的19584个电极组成。通过在单个芯片上结合两种读出结构,即有源像素传感器(APS)和开关矩阵(SM),双模HD-MEA能够同时从整个阵列进行记录,并在电极子集上实现高信噪比记录。APS读出电路在动作电位带(300 Hz-5 kHz)的噪声电平为10.9μVrms,而开关矩阵读出的噪声电平则为3.1μVrms。
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