NiCo2S4 nano composite structure with high electrochemical performance in band gap

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Chalcogenide Letters Pub Date : 2022-11-30 DOI:10.15251/cl.2022.1911.847
V. Latha, K. Sambathkumar, N. Rajkamal, M. Venkatachalapthy
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Abstract

Synthesize NiCo2S4 and its application to find out electrochemical performance of anionic reaction in nano chemistry. Because of binary transition metal sulfide NiCo2S4 are prepared by using a Chemical precipitation to find out anionic movement within the compound. But the electrochemical were used as a conductive network for the NiCo2S4 hexagonal nano plates. Hence hexagonal nano plates have an average crystalline size of the particles 38.34nm and 20.06nm. Nickel and cobalt sulfides with various stoichiometries have been synthesized from Ni(CH3COO)2.2H2O, CoCl2.6H2O with different sulfur precursors using as a direct method. The morphological composite were characterized by (scanning electron microscopy) SEM, XRD (X-ray diffraction), EDX, UV-visible, FTIR spectrum and optical band-gap energy were evaluated. Optical band-gap energies in the range 4.7 eV−5.1 eV were observed.
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具有高带隙电化学性能的NiCo2S4纳米复合结构
合成NiCo2S4及其在纳米化学阴离子反应电化学性能研究中的应用。由于二元过渡金属硫化物,采用化学沉淀法制备了NiCo2S4,以找出化合物内部的阴离子运动。但电化学的导电网络被用于NiCo2S4六方纳米板。因此,六方纳米板的平均晶粒尺寸分别为38.34nm和20.06nm。以Ni(CH3COO)2.2H2O, CoCl2.6H2O为原料,采用不同的硫前驱体,用直接法合成了不同化学计量的镍和钴硫化物。采用扫描电镜(SEM)、x射线衍射(XRD)、EDX、紫外可见光谱(UV-visible)、红外光谱(FTIR)和光学带隙能(band-gap energy)对复合材料进行表征。光带隙能在4.7 eV ~ 5.1 eV范围内。
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来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
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