Systematic investigation of magneto-electronic, structural, thermoelectric and optical properties of Nd2MgX4 (X = S, Se) compounds

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Chalcogenide Letters Pub Date : 2023-08-01 DOI:10.15251/cl.2023.208.559
M. Fida, S. Aldaghfag, M. Yaseen, M. Ishfaq
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Abstract

The structural, magnetic, optoelectronic, and thermoelectric (TE) characteristics of Nd2MgX4 (X = S, Se) are determined by utilizing the density functional theory (DFT) based full potential linearized augmented plane wave (FP-LAPW) method as employed in WEIN2k code. The exchange and correlation energies along with Coulomb interactions are brought into consideration by employing local density of approximation with Hubbard model (LDA+U). Tolerance (τ) factor and formation enthalpy were utilized to confirm the stability of both spinels. τ values are 0.70 and 0.68, and formation enthalpy values are (ΔHf) are -3.34 eV and -2.19 eV for Nd2MgX4 (X = S, Se), respectively. For Nd2MgX4 (X = S, Se) metallic behavior is found in spin up case while considerable bandgaps are found in spin down with half metallic bandgap (Eg) values of 1.82 and 1.26 eV (in spin down), correspondingly. The calculated magnetic moment for Nd2MgX4 (X = S, Se) are 12.0008 μB and 12.0003 μB, respectively. Furthermore, optical features including refractive index n(ω), dielectric constant 𝜀𝜀(𝜔𝜔), reflectivity R(ω), optical conductivity σ(ω), absorption coefficient α(ω) and extinction coefficient k(ω) are computed. The maximum calculated real part of dielectric constant 𝜀𝜀1(𝜔𝜔) values for Nd2MgX4 (X = S, Se) are 9.2 and 10.8, respectively. For Nd2MgX4 (X = S, Se), σ(ω) has maximum value of 7642.9 at 6.6 and 7592.5 (Ω cm)-1 at 5.99 eV, respectively. The various temperature dependent thermoelectric (TE) parameters along with figure of merit (ZT) are determined to get full insight into the TE behavior for both compounds by using BoltzTraP code. The computed ZT value for Nd2MgSe4 is 0.81 at 800 K while Nd2MgS4 has ZT value of 0.80 at 800 K. Results showed that both spinels have potential in spintronics and in cooling industries.
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Nd2MgX4 (X = S, Se)化合物的磁电子、结构、热电和光学性质的系统研究
利用WEIN2k代码中基于密度泛函理论(DFT)的全势线性化增广平面波(FP-LAPW)方法测定Nd2MgX4 (X = S, Se)的结构、磁性、光电和热电(TE)特性。采用Hubbard模型(LDA+U)的局部逼近密度,考虑了库仑相互作用下的交换能和相关能。利用耐受性(τ)因子和形成焓来证实两种尖晶石的稳定性。Nd2MgX4 (X = S, Se)的τ值分别为0.70和0.68,生成焓值(ΔHf)分别为-3.34 eV和-2.19 eV。对于Nd2MgX4 (X = S, Se),自旋向上有金属行为,自旋向下有相当大的带隙,半金属带隙(Eg)分别为1.82 eV和1.26 eV(自旋向下)。计算得到Nd2MgX4 (X = S, Se)的磁矩分别为12.0008 μB和12.0003 μB。计算了折射率n(ω)、介电常数(𝜔𝜔)、反射率R(ω)、光导率σ(ω)、吸收系数α(ω)和消光系数k(ω)等光学特性。Nd2MgX4 (X = S, Se)的介电常数实部最大值分别为9.2和10.8。对于Nd2MgX4 (X = S, Se), σ(ω)在6.6 eV时最大值为7642.9,5.99 eV时最大值为7592.5 (Ω cm)-1。通过使用BoltzTraP代码,确定了各种温度相关的热电(TE)参数以及品质值(ZT),以充分了解这两种化合物的TE行为。Nd2MgSe4在800 K时的ZT值为0.81,Nd2MgS4在800 K时的ZT值为0.80。结果表明,这两种尖晶石在自旋电子学和冷却工业中都有应用潜力。
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来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
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