Iyappan Gunasekaran, Govindaraj Rajamanickam, Santhosh Narendiran, R. Perumalsamy, Kiruthika Ramany, R. Sankararajan
{"title":"Fabrication of vibration sensors using precursor molar concentration varied ZnO nanostructures grown by refresh hydrothermal method","authors":"Iyappan Gunasekaran, Govindaraj Rajamanickam, Santhosh Narendiran, R. Perumalsamy, Kiruthika Ramany, R. Sankararajan","doi":"10.1108/cw-08-2020-0183","DOIUrl":null,"url":null,"abstract":"Purpose Various approaches have been made to alter the vibration sensing properties of zinc oxide (ZnO) films to achieve high sensitivity. This paper aims to report the experimental study of the fabrication of precursor molar ratio concentration varied ZnO nanostructures grown on rigid substrates using the refresh hydrothermal method. The effect of these fabricated ZnO nanostructures-based vibration sensors was experimentally investigated using a vibration sensing setup. Design/methodology/approach ZnO nanostructures have been grown using low temperature assisted refresh hydrothermal method with different precursor molar concentrations 0.025 M (R1), 0.075 M (R2) and 0.125 M (R3). Poly 3,4-ethylenedioxythiophene polystyrene sulfonate, a p-type material is spun coated on the grown ZnO nanostructures. Structural analysis reveals the increased intensity of the (002) plane and better c-axis orientation of the R2 and R3 sample comparatively. Morphological examination shows the changes in the grown nanostructures upon increasing the precursor molar concentration. The optical band gap value decreases from 3.11 eV to 3.08 eV as the precursor molar concentration is increased. Photoconductivity study confirms the formation of a p-n junction with less turn-on voltage for all the fabricated devices. A less internal resistance of 0.37 kΩ was obtained from Nyquist analysis for R2 compared with the other two fabricated samples. Vibration testing experimentation showed an improved output voltage of the R2 sample (2.61 V at 9 Hz resonant frequency and 2.90 V for 1 g acceleration) comparatively. This also gave an increased sensitivity of 4.68 V/g confirming its better performance when compared to the other fabricated two samples. Findings Photoconductivity study confirms the formation of a p-n junction with less turn-on voltage for all the fabricated devices. A less internal resistance of 0.37 kΩ was calculated from the Nyquist plot. Vibration testing experimentation proves an increased sensitivity of 4.68 V/g confirming its better performance when compared to the other fabricated two samples. Originality/value Vibration testing experimentation proves an increased sensitivity of 4.68 V/g for R2 confirming its better performance when compared to the other fabricated two samples.","PeriodicalId":50693,"journal":{"name":"Circuit World","volume":" ","pages":""},"PeriodicalIF":0.8000,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Circuit World","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1108/cw-08-2020-0183","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Purpose Various approaches have been made to alter the vibration sensing properties of zinc oxide (ZnO) films to achieve high sensitivity. This paper aims to report the experimental study of the fabrication of precursor molar ratio concentration varied ZnO nanostructures grown on rigid substrates using the refresh hydrothermal method. The effect of these fabricated ZnO nanostructures-based vibration sensors was experimentally investigated using a vibration sensing setup. Design/methodology/approach ZnO nanostructures have been grown using low temperature assisted refresh hydrothermal method with different precursor molar concentrations 0.025 M (R1), 0.075 M (R2) and 0.125 M (R3). Poly 3,4-ethylenedioxythiophene polystyrene sulfonate, a p-type material is spun coated on the grown ZnO nanostructures. Structural analysis reveals the increased intensity of the (002) plane and better c-axis orientation of the R2 and R3 sample comparatively. Morphological examination shows the changes in the grown nanostructures upon increasing the precursor molar concentration. The optical band gap value decreases from 3.11 eV to 3.08 eV as the precursor molar concentration is increased. Photoconductivity study confirms the formation of a p-n junction with less turn-on voltage for all the fabricated devices. A less internal resistance of 0.37 kΩ was obtained from Nyquist analysis for R2 compared with the other two fabricated samples. Vibration testing experimentation showed an improved output voltage of the R2 sample (2.61 V at 9 Hz resonant frequency and 2.90 V for 1 g acceleration) comparatively. This also gave an increased sensitivity of 4.68 V/g confirming its better performance when compared to the other fabricated two samples. Findings Photoconductivity study confirms the formation of a p-n junction with less turn-on voltage for all the fabricated devices. A less internal resistance of 0.37 kΩ was calculated from the Nyquist plot. Vibration testing experimentation proves an increased sensitivity of 4.68 V/g confirming its better performance when compared to the other fabricated two samples. Originality/value Vibration testing experimentation proves an increased sensitivity of 4.68 V/g for R2 confirming its better performance when compared to the other fabricated two samples.
期刊介绍:
Circuit World is a platform for state of the art, technical papers and editorials in the areas of electronics circuit, component, assembly, and product design, manufacture, test, and use, including quality, reliability and safety. The journal comprises the multidisciplinary study of the various theories, methodologies, technologies, processes and applications relating to todays and future electronics. Circuit World provides a comprehensive and authoritative information source for research, application and current awareness purposes.
Circuit World covers a broad range of topics, including:
• Circuit theory, design methodology, analysis and simulation
• Digital, analog, microwave and optoelectronic integrated circuits
• Semiconductors, passives, connectors and sensors
• Electronic packaging of components, assemblies and products
• PCB design technologies and processes (controlled impedance, high-speed PCBs, laminates and lamination, laser processes and drilling, moulded interconnect devices, multilayer boards, optical PCBs, single- and double-sided boards, soldering and solderable finishes)
• Design for X (including manufacturability, quality, reliability, maintainability, sustainment, safety, reuse, disposal)
• Internet of Things (IoT).