Numerical simulation of the effect of gradual substitution of sulfur with selenium or tin with germanium in Cu2ZnSnS4 absorber layer on kesterite solar cell efficiency
N. Messei, M. Aida, A. Attaf, N. Hamani, S. Laznek
{"title":"Numerical simulation of the effect of gradual substitution of sulfur with selenium or tin with germanium in Cu2ZnSnS4 absorber layer on kesterite solar cell efficiency","authors":"N. Messei, M. Aida, A. Attaf, N. Hamani, S. Laznek","doi":"10.15251/cl.2023.202.165","DOIUrl":null,"url":null,"abstract":"To enhance the efficiency of kesterite Cu2ZnSnS4 solar cell, different gradient strategies are investigated. Absorber layer gradient is obtained by partial substitution of sulfur with selenium or tin with germanium. The PV Parameters are calculated using the SCAPS1D program. The effect of the front, back, and double gradient on the cell parameters was investigated. We proposed also the fully graded gap absorber layer profile. The opencircuit voltage has increased to 1.040V, the fill factor has increased to 71.69%, and the efficiency has exceeded 22.95%. In contrast to other types of gradients, the short-circuit current density remains high (Jsc= 39.7mA / cm2 ).","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.2000,"publicationDate":"2023-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chalcogenide Letters","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.15251/cl.2023.202.165","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
To enhance the efficiency of kesterite Cu2ZnSnS4 solar cell, different gradient strategies are investigated. Absorber layer gradient is obtained by partial substitution of sulfur with selenium or tin with germanium. The PV Parameters are calculated using the SCAPS1D program. The effect of the front, back, and double gradient on the cell parameters was investigated. We proposed also the fully graded gap absorber layer profile. The opencircuit voltage has increased to 1.040V, the fill factor has increased to 71.69%, and the efficiency has exceeded 22.95%. In contrast to other types of gradients, the short-circuit current density remains high (Jsc= 39.7mA / cm2 ).
期刊介绍:
Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and
appears with twelve issues per year. The journal is open to letters, short communications and breakings news
inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in
structure, properties and applications, as well as those covering special properties in nano-structured
chalcogenides are admitted.