Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser

Nanotechnology and Precision Engineering Pub Date : 2020-12-01 DOI:10.1016/j.npe.2020.11.003

Jiayu Liu , Zongwei Xu , Ying Song , Hong Wang , Bing Dong , Shaobei Li , Jia Ren , Qiang Li , Mathias Rommel , Xinhua Gu , Bowen Liu , Minglie Hu , Fengzhou Fang

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引用次数: 15

Abstract

Silicon-vacancy (V_Si) centers in silicon carbide (SiC) are expected to serve as solid qubits, which can be used in quantum computing and sensing. As a new controllable color center fabrication method, femtosecond (fs) laser writing has been gradually applied in the preparation of V_Si in SiC. In this study, 4H-SiC was directly written by an fs laser and characterized at 293 K by atomic force microscopy, confocal photoluminescence (PL), and Raman spectroscopy. PL signals of V_Si were found and analyzed using 785 nm laser excitation by means of depth profiling and two-dimensional mapping. The influence of machining parameters on the V_Si formation was analyzed, and the three-dimensional distribution of V_Si defects in the fs laser writing of 4H-SiC was established.

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飞秒激光制备4H-SiC中硅空位色中心的共聚焦光致发光特性

碳化硅(SiC)中的硅空位(VSi)中心有望用作固体量子比特，可用于量子计算和传感。飞秒激光写入作为一种新的可控色心制备方法，已逐渐应用于碳化硅中VSi的制备。在本研究中，4H-SiC由fs激光直接写入，并通过原子力显微镜、共聚焦光致发光(PL)和拉曼光谱在293 K下进行了表征。在785 nm激光激发下，采用深度剖面和二维映射的方法对VSi的PL信号进行了分析。分析了加工参数对VSi形成的影响，建立了fs激光刻蚀4H-SiC过程中VSi缺陷的三维分布。

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Nanotechnology and Precision Engineering

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