Tatsunari Saito, Yuta Imaizumi, K. Kobayashi, Yoshinobu Suehiro, N. Koide, T. Takeuchi, S. Kamiyama, M. Iwaya
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引用次数: 0
Abstract
Monolithic GaInN-based micro μLEDs arrays are expected to be applied to ultra-high-definition displays. In this study, stray light behavior of them fabricated on sapphire substrates was investigated. Results reveal that strong stray light appears considerably outside the μLED drive region, which is a major obstacle to the realization of high-definition displays. We also explored various techniques to effectively reduce the stray light. Use of flat sapphire substrates and removal of GaN material between μLEDs are effective in reducing stray light and are essential for achieving high definition in monolithic GaInN-based μLED array displays.
期刊介绍：
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:
• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
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