3-D analytical model of the high-voltage interconnection effect for SOI LDMOS

IF 3.3 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Superlattices and Microstructures Pub Date : 2021-12-01 DOI:10.1016/j.spmi.2021.107056
Ling Du , Yu-Feng Guo , Jun Zhang , Jia-Fei Yao , Jian-Hua Liu , Chen-Yang Huang , Man Li
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Abstract

The high-voltage interconnection (HVI) effect induces electric field crowding at the drift region near the source side of power lateral double diffusion MOS (LDMOS). Thus, the electric field profile is deteriorated, and the breakdown characteristic is weakened. This increases the difficulty of device optimization and affects the reliability of the device significantly. Since conventional models based 2-D method can only treat the HVI as a metal layer, therefore, no quantitative analysis can be provided. In order to quantify the impact of the HVI and provide a design scheme for preventing the deterioration in the device's breakdown characteristic, a novel three-dimensional analytical model of the HVI effect for the SOI LDMOS is proposed. By solving the 3-D Poisson's equation, the potential and electric field distribution of the drift region surface are investigated, and the breakdown mechanism is explored quantitatively. The analytical solutions are matched well with the simulation results, which verify the validity of the model. Based on the model, a simple and effective criterion is derived to optimize the structure geometry parameters. The largest width of the HVI metal line is given to prevent the breakdown voltage deterioration.

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SOI LDMOS高压互连效应的三维解析模型
高压互连效应在功率侧双扩散MOS (LDMOS)源侧附近的漂移区引起电场拥挤。因此,电场分布恶化,击穿特性减弱。这增加了设备优化的难度,并显著影响设备的可靠性。由于传统的基于二维模型的方法只能将HVI视为金属层,因此无法进行定量分析。为了量化HVI的影响,并提供防止器件击穿特性恶化的设计方案,提出了一种新的SOI LDMOS HVI效应的三维解析模型。通过求解三维泊松方程,研究了漂移区表面的电位和电场分布,定量探讨了击穿机理。解析解与仿真结果吻合较好,验证了模型的有效性。在此基础上,推导出一种简单有效的结构几何参数优化准则。为防止击穿电压劣化,给出了HVI金属线的最大宽度。
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来源期刊
Superlattices and Microstructures
Superlattices and Microstructures 物理-物理:凝聚态物理
CiteScore
6.10
自引率
3.20%
发文量
35
审稿时长
2.8 months
期刊介绍: Micro and Nanostructures is a journal disseminating the science and technology of micro-structures and nano-structures in materials and their devices, including individual and collective use of semiconductors, metals and insulators for the exploitation of their unique properties. The journal hosts papers dealing with fundamental and applied experimental research as well as theoretical studies. Fields of interest, including emerging ones, cover: • Novel micro and nanostructures • Nanomaterials (nanowires, nanodots, 2D materials ) and devices • Synthetic heterostructures • Plasmonics • Micro and nano-defects in materials (semiconductor, metal and insulators) • Surfaces and interfaces of thin films In addition to Research Papers, the journal aims at publishing Topical Reviews providing insights into rapidly evolving or more mature fields. Written by leading researchers in their respective fields, those articles are commissioned by the Editorial Board. Formerly known as Superlattices and Microstructures, with a 2021 IF of 3.22 and 2021 CiteScore of 5.4
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