Monolithic Fabrication of Silicon Nanowires Bridging Thick Silicon Structures

Zuhal Tasdemir;Oliver Peric;Davide Sacchetto;Georg Ernest Fantner;Yusuf Leblebici;B. Erdem Alaca
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引用次数: 2

Abstract

A monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10 μm is demonstrated with a future prospect for 50 μm opening up new possibilities for the deterministic integration of nanowires with microsystems. Nanowires with in-plane dimensions as low as 20 nm and aspect ratios up to 150 are obtained. Nanomechanical characterization through bending tests further confirms structural integrity of the connection between nanowires and anchoring Si microstructures.
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硅纳米线桥接厚硅结构的单片制造
开发了一种在厚硅衬底内制造硅纳米线的单片工艺。各向异性蚀刻和侧壁钝化的组合用于在随后的深蚀刻期间保护和释放Si线。证实了10美元至50美元的蚀刻深度,为纳米线与微系统的确定性集成开辟了新的可能性。获得了具有低至20nm的平面内尺寸和高达150的纵横比的纳米线。通过弯曲测试进行的纳米力学表征进一步证实了纳米线和锚定硅微观结构之间连接的结构完整性。
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Monolithic Fabrication of Silicon Nanowires Bridging Thick Silicon Structures Table of contents Welcome to the New IEEE Nanotechnology Express (ENANO)! IEEE Nanotechnology Express information for authors IEEE Transactions on Nanotechnology publication information
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