{"title":"Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs","authors":"Dong-Ru Hsieh;Kun-Cheng Lin;Tien-Sheng Chao","doi":"10.1109/JEDS.2019.2896599","DOIUrl":null,"url":null,"abstract":"In this paper, the influence of nitrous oxide (N<sub>2</sub>O) nitridation temperatures on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) TFTs is experimentally investigated. The tetraethoxysilane (TEOS) gate oxide quality for PG JAM TFTs can be significantly improved by increasing N<sub>2</sub>O nitridation temperatures (<inline-formula> <tex-math notation=\"LaTeX\">$T_{N}$ </tex-math></inline-formula>) from 700 °C to 800 °C in N<sub>2</sub>O ambient, resulting in the improvement of average subthreshold swing (A.S.S.), increase of on current (<inline-formula> <tex-math notation=\"LaTeX\">${\\text{I}}_{\\text{ON}}$ </tex-math></inline-formula>), and enhancement of TEOS gate oxide breakdown <inline-formula> <tex-math notation=\"LaTeX\">${E}$ </tex-math></inline-formula>-field (<inline-formula> <tex-math notation=\"LaTeX\">${E} _{\\text {OBD}}$ </tex-math></inline-formula>). PG JAM TFTs by means of a proper channel doping concentration (<inline-formula> <tex-math notation=\"LaTeX\">$N_{\\text {ch}}= {5} \\times {10}^{18}$ </tex-math></inline-formula> cm<inline-formula> <tex-math notation=\"LaTeX\">$^{-3}$ </tex-math></inline-formula>) and a suitable <inline-formula> <tex-math notation=\"LaTeX\">$T_{N}$ </tex-math></inline-formula> (800 °C) exhibit a steep A.S.S. ~96 mV/dec. and a large <inline-formula> <tex-math notation=\"LaTeX\">${E} _{\\text {OBD}} {\\sim }12.1$ </tex-math></inline-formula> MV/cm.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"7 ","pages":"282-286"},"PeriodicalIF":2.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/JEDS.2019.2896599","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/8630465/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 4
Abstract
In this paper, the influence of nitrous oxide (N2O) nitridation temperatures on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) TFTs is experimentally investigated. The tetraethoxysilane (TEOS) gate oxide quality for PG JAM TFTs can be significantly improved by increasing N2O nitridation temperatures ($T_{N}$ ) from 700 °C to 800 °C in N2O ambient, resulting in the improvement of average subthreshold swing (A.S.S.), increase of on current (${\text{I}}_{\text{ON}}$ ), and enhancement of TEOS gate oxide breakdown ${E}$ -field (${E} _{\text {OBD}}$ ). PG JAM TFTs by means of a proper channel doping concentration ($N_{\text {ch}}= {5} \times {10}^{18}$ cm$^{-3}$ ) and a suitable $T_{N}$ (800 °C) exhibit a steep A.S.S. ~96 mV/dec. and a large ${E} _{\text {OBD}} {\sim }12.1$ MV/cm.
本文实验研究了一氧化二氮(N2O)氮化温度对p型Pi栅极(PG)多晶硅无结累积模式(JAM)TFT的影响。通过在N2O环境中将N2O氮化温度(TN)从700°C提高到800°C,可以显著改善PG-JAM TFT的四乙氧基硅烷(TEOS)栅极氧化物质量,从而改善平均亚阈值摆幅(A.S.S.)、增加导通电流(ION)和增强TEOS栅极氧化物击穿电场(EOBD)。通过适当的沟道掺杂浓度(Nch=5×1018cm-3)和适当的TN(800°C),PG JAM TFT表现出陡峭的a.S.S~96mV/dec。EOBD~12.1MV/cm。
期刊介绍:
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