Atomic Layer Deposition of TiOx/Al2O3 Bilayer Structures for Resistive Switching Memory Applications†

Chemical Vapor Deposition Pub Date : 2014-07-28 DOI:10.1002/cvde.201407123

Hehe Zhang, Nabeel Aslam, Marcel Reiners, Rainer Waser, Susanne Hoffmann-Eifert

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引用次数: 12

Abstract

The resistive switching (RS) properties of a thin Al₂O₃ layer and TiO_x/Al₂O₃ bilayers integrated into TiN/metal oxide/Pt crossbar devices are investigated for future memristive device (ReRAM) applications. The oxide bilayer stack is realized in consecutive atomic layer deposition (ALD) processes at 300 °C without any post-annealing step. Stoichiometric Al₂O₃ and oxygen-deficient TiO_x thin films are grown from dimethylaluminum isopropoxide [DMAI: (CH₃)₂AlOCH(CH₃)₂] and tetrakis-dimethlyamido-titanium [TDMAT: Ti(N(CH₃)₂)₄], respectively, as the metal sources, and water as the oxygen source. High insulating characteristics are confirmed for as-grown amorphous Al₂O₃ films with a dielectric permittivity of 8.0 and disruptive field strength of about 7 MV cm⁻¹, whereas the oxygen-deficient TiO_x shows semiconducting behavior. The bipolar-type RS characteristics of TiN/TiO_x/Al₂O₃/Pt cells show a strong dependence on both oxide layer thicknesses. A stable OFF/ON state resistance ratio of about 10⁵ is obtained for the bilayer structure of 5 nm TiO_x and 3.7 nm Al₂O₃.

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阻性开关存储器中TiOx/Al2O3双层结构的原子层沉积

研究了集成在TiN/金属氧化物/Pt交叉栅器件中的薄Al2O3层和TiOx/Al2O3双层层的电阻开关(RS)特性，用于未来的忆阻器件(ReRAM)应用。在300°C的连续原子层沉积(ALD)工艺中实现了氧化物双层堆叠，而无需任何后退火步骤。以二甲基异丙铝[DMAI: (CH3)2AlOCH(CH3)2]和四甲基-二甲酰胺-钛[TDMAT: Ti(N(CH3)2)4]为金属源，水为氧源，分别制备了Al2O3和缺氧TiOx薄膜。非晶Al2O3薄膜具有较高的绝缘特性，其介电常数为8.0，破坏场强约为7 MV cm−1，而缺氧TiOx薄膜则表现出半导体特性。TiN/TiOx/Al2O3/Pt电池的双极性RS特性对两种氧化层厚度都有很强的依赖性。对于5nm TiOx和3.7 nm Al2O3的双层结构，获得了稳定的OFF/ON电阻比约为105。

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Chemical Vapor Deposition 工程技术-材料科学：膜

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>12 weeks

期刊介绍： Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.

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