Kamran Ali, Kyung-Hyun Choi, Nauman Malik Muhammad
{"title":"Roll-to-Roll Atmospheric Atomic Layer Deposition of Al2O3 Thin Films on PET Substrates†","authors":"Kamran Ali, Kyung-Hyun Choi, Nauman Malik Muhammad","doi":"10.1002/cvde.201407126","DOIUrl":null,"url":null,"abstract":"<div>\n \n \n <section>\n \n <p>The conventional atomic layer deposition (ALD) technologies are capable of fabricating supreme quality thin films of a wide variety of materials, but sequential introduction and purging of precursors and inert gases prevent its application in the mass production of thin films under atmospheric conditions. In this study, we introduce a novel technique of roll-to-roll atmospheric (R2R-A)ALD using a multiple-slit gas source head. Thin films of Al<sub>2</sub>O<sub>3</sub> are developed on a movable web of polyethylene terephthalate (PET) substrate at 50 °C. The Al<sub>2</sub>O<sub>3</sub> deposition is carried out under a working pressure of 740 Torr, which is very near to atmospheric pressure (760 Torr). An appreciable growth rate of 0.98 Å per cycle is observed at a carefully optimized web velocity of 7 mm s<sup>−1</sup>. Good morphological, chemical, electrical, and optical characteristics are shown by the Al<sub>2</sub>O<sub>3</sub> films produced at a large scale. Low root mean square roughness (<i>R</i><sub>q</sub>) values of 1.85 nm and 1.75 nm are recorded for the Al<sub>2</sub>O<sub>3</sub> films deposited at 50 °C over 75 and 125 ALD cycles, respectively. The appearance of Al 2p, Al 2s, and O 1s peaks at the binding energies of 74 eV, 119 eV, and 531 eV, respectively, in the X-ray photoelectron spectroscopy (XPS) analysis confirms the fabrication of Al<sub>2</sub>O<sub>3</sub> films, which is also supported by Fourier transform infrared spectroscopy (FTIR). The films show excellent insulating properties, and optical transmittance of more than 85% is recorded in the visible region.</p>\n </section>\n </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"20 10-11-12","pages":"380-387"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201407126","citationCount":"24","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Vapor Deposition","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201407126","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24
Abstract
The conventional atomic layer deposition (ALD) technologies are capable of fabricating supreme quality thin films of a wide variety of materials, but sequential introduction and purging of precursors and inert gases prevent its application in the mass production of thin films under atmospheric conditions. In this study, we introduce a novel technique of roll-to-roll atmospheric (R2R-A)ALD using a multiple-slit gas source head. Thin films of Al2O3 are developed on a movable web of polyethylene terephthalate (PET) substrate at 50 °C. The Al2O3 deposition is carried out under a working pressure of 740 Torr, which is very near to atmospheric pressure (760 Torr). An appreciable growth rate of 0.98 Å per cycle is observed at a carefully optimized web velocity of 7 mm s−1. Good morphological, chemical, electrical, and optical characteristics are shown by the Al2O3 films produced at a large scale. Low root mean square roughness (Rq) values of 1.85 nm and 1.75 nm are recorded for the Al2O3 films deposited at 50 °C over 75 and 125 ALD cycles, respectively. The appearance of Al 2p, Al 2s, and O 1s peaks at the binding energies of 74 eV, 119 eV, and 531 eV, respectively, in the X-ray photoelectron spectroscopy (XPS) analysis confirms the fabrication of Al2O3 films, which is also supported by Fourier transform infrared spectroscopy (FTIR). The films show excellent insulating properties, and optical transmittance of more than 85% is recorded in the visible region.
期刊介绍:
Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.