Jun Du, Xin Gu, Huaqiang Fu, Haizhi Guo, Jiao Liu, Qi Wu, Jianguo Zou
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引用次数: 0
Abstract
CVD is used to prepare indium tin oxide (ITO)-induced polycrystalline silicon thin films with SiH4 as the precursor. The growth of columnar polycrystalline silicon is shown. The sheet resistance (R□) of ITO-induced Si thin films ranges from about 167.3 to 466.2 Ω/sq. Light absorption increases, as does the detected transmittance, by about 18.4% − 30.5% for wavelengths less than 500 − 700 nm.
期刊介绍：
Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
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