Preparation of Highly Flexible SiC Nanowires by Fluidized Bed Chemical Vapor Deposition†

Rongzheng Liu, Malin Liu, Jiaxing Chang, Youlin Shao, Bing Liu
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引用次数: 4

Abstract

High flexible SiC nanowires with diameters in the range of 10 to 50 nm and lengths of several hundred micrometers to several millimeters are synthesized using a novel catalyst-assisted fluidized bed chemical vapor deposition method. Methyltrichlorosilane (MTS) is used as source material and particles containing cobalt were used as catalyst. The fluidized bed is specially designed to form a perpendicular uneven temperature distribution. Suspended nanosized liquid catalyst droplets are produced at middle high temperature zone and SiC nanowires are formed in situ on the catalyst droplets then accumulated at the upper part of fluidized bed. The nanowires exhibit a single crystal feature with some stacking faults. Transmission electron microscopy (TEM) analysis verifies a growth direction along the <111> axis of the nanowires. A blue shift optical emission band at about 420 nm is detected using photoluminescence spectroscopy. From the high-resolution TEM investigation, a nanoscale smooth plane between the nanowire and the catalyst tip is observed and the two phases exhibit highly epitaxial growth interface. The growth process of the nanowires is discussed and a possible formation mechanism is proposed.

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流化床化学气相沉积制备高柔性碳化硅纳米线
采用新型催化辅助流化床化学气相沉积方法合成了直径在10 ~ 50 nm、长度在几百微米~几毫米之间的高柔性SiC纳米线。以甲基三氯硅烷(MTS)为原料,含钴颗粒为催化剂。流化床是专门设计的,以形成垂直的不均匀温度分布。在中高温区产生悬浮的纳米级液体催化剂液滴,在催化剂液滴上原位形成碳化硅纳米线,并在流化床上部积累。纳米线呈单晶结构,存在一些层错。透射电镜(TEM)分析证实了沿<111>纳米线的轴线。利用光致发光光谱法检测到约420 nm的蓝移光发射带。高分辨率透射电镜观察发现,纳米线与催化剂尖端之间存在纳米级光滑平面,两相呈现高度外延生长界面。讨论了纳米线的生长过程,并提出了可能的形成机理。
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Chemical Vapor Deposition
Chemical Vapor Deposition 工程技术-材料科学:膜
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期刊介绍: Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
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