Silicon Oxycarbide Films Produced by Remote Microwave Hydrogen Plasma CVD using a Tetramethyldisiloxane Precursor: Growth Kinetics, Structure, Surface Morphology, and Properties†
Aleksander M. Wrobel, Pawel Uznanski, Agnieszka Walkiewicz-Pietrzykowska
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引用次数: 5
Abstract
Amorphous hydrogenated silicon oxycarbide (a-SiCO:H) thin films are produced by remote microwave hydrogen plasma CVD using 1,1,3,3-tetramethyldisiloxane precursor. The effect of substrate temperature (TS) on the chemical structure and some properties of resulting a-SiCO:H films is reported. The examination performed by infrared spectroscopy revealed that the increase in TS involves the elimination of organic moieties from the film and its transformation from polymer-like to ceramic-like high-crosslink-density material. Due to their small surface roughness, high density, and good optical transparency, the a-SiCO:H films seem to be useful coatings for optical and electronic devices.
期刊介绍：
Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
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