Phase-selective Route to V-O Film Formation: A Systematic MOCVD Study Into the Effects of Deposition Temperature on Structure and Morphology†

Simon F. Spanò, Roberta G. Toro, Guglielmo G. Condorelli, Grazia M. L. Messina, Giovanni Marletta, Graziella Malandrino
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引用次数: 8

Abstract

A systematic study into the MOCVD of V-O films using the vanadyl-acetylacetonate [VO(acac)2] precursor is carried out. The films are prepared via low pressure MOCVD on Si(001) substrates. The nature and quality of films are examined by varying operational parameters, e.g., deposition temperature, precursor vaporization rate, and flow of oxygen reacting gas. X-ray diffraction data point to the formation of crystalline films in the range 200−550 °C. Outside of this temperature ranges amorphous phases were obtained. Field-emission scanning electron microscope (FESEM) images indicate very homogeneous surfaces with grain shape and dimensions depending on operational conditions. Energy dispersive X-ray (EDX) and X-ray photoelectron spectroscopy (XPS) analyses point to the absence of any C contamination.

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V-O膜形成的相选择途径:沉积温度对结构和形貌影响的MOCVD系统研究
对以乙酰丙酮钒[VO(acac)2]为前驱体的V-O膜的MOCVD进行了系统的研究。薄膜是通过低压MOCVD在Si(001)衬底上制备的。薄膜的性质和质量是通过不同的操作参数来检验的,例如,沉积温度、前驱体蒸发速率和氧气反应气体的流量。x射线衍射数据表明在200 - 550°C范围内形成结晶膜。在此温度范围之外得到非晶相。场发射扫描电子显微镜(FESEM)图像显示非常均匀的表面,晶粒形状和尺寸取决于操作条件。能量色散x射线(EDX)和x射线光电子能谱(XPS)分析表明没有任何C污染。
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Chemical Vapor Deposition
Chemical Vapor Deposition 工程技术-材料科学:膜
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期刊介绍: Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
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