A smart power transistor for high voltage inverter applications

Abstract

Motors, lighting equipment and power supplied benefit from high voltage smart power integrated circuits. Limitations of standard isolation techniques in respect of reverse operation in inductive load applications, i.e. high $\text{d}\text{V/}\text{d}\text{t}$ load, cause standard isolation techniques to fail in these applications. Dielectric isolation techniques are overcoming these problems. This paper describes a new concept for high voltage power integrated circuits using silicon on insulator (SOI) technology in high voltage smart power transistors.

SOI technology enables the integration of vertical power transistors and smart power features such as gate drive, overcurrent and overtemperature shutdown circuitry. Using dielectric isolation techniques, virtually all power transistor families and integrated circuits technologies can be merged. The benefits and limitations of this technology are discussed in connection with a high voltage smart power MOS transistor and an IGBT using SOI technology.