Xerographic spectroscopy of gap states: Se-rich amorphous semiconductors

IF 0.6 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Journal of Optoelectronics and Advanced Materials Pub Date : 2010-01-01 DOI:10.1016/B978-0-12-388429-9.00005-4
V. Mikla
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来源期刊
Journal of Optoelectronics and Advanced Materials
Journal of Optoelectronics and Advanced Materials 工程技术-材料科学:综合
CiteScore
0.90
自引率
20.00%
发文量
0
审稿时长
6.5 months
期刊介绍: The Journal of Optoelectronics and Advanced Materials (J. Optoelectron. Adv. M.) appears with 12 issues per year and publishes papers in the field of optoelectronics, photonics, and new advanced materials (nonlinear optical materials, crystalline and non-crystalline materials, nano-structured materials, magnetic materials, functional and smart materials, materials based on polymers, biomaterials) of relevance for optoelectronics and photonics.
期刊最新文献
Fractal and fracture mechanics analyses of fatigue fracture surfaces of metallic materials Corrosion Behavior of Ni/Al2O3 and Ni/ZrO2 Nanocomposite Thin Films FT -IR and Raman spectroscopic studies of xAg2O-(100-x)[3B2O3·As2O3] glass system Xerographic spectroscopy of gap states: Se-rich amorphous semiconductors Fabrication of octyltriethoxysilane Langmuir-Blodgett thin film
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