Xerographic spectroscopy of gap states: Se-rich amorphous semiconductors

IF 0.6 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Journal of Optoelectronics and Advanced Materials Pub Date : 2010-01-01 DOI:10.1016/B978-0-12-388429-9.00005-4
V. Mikla
{"title":"Xerographic spectroscopy of gap states: Se-rich amorphous semiconductors","authors":"V. Mikla","doi":"10.1016/B978-0-12-388429-9.00005-4","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":16679,"journal":{"name":"Journal of Optoelectronics and Advanced Materials","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2010-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Optoelectronics and Advanced Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/B978-0-12-388429-9.00005-4","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 1
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
间隙态的静电光谱学:富硒非晶半导体
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Journal of Optoelectronics and Advanced Materials
Journal of Optoelectronics and Advanced Materials 工程技术-材料科学:综合
CiteScore
0.90
自引率
20.00%
发文量
0
审稿时长
6.5 months
期刊介绍: The Journal of Optoelectronics and Advanced Materials (J. Optoelectron. Adv. M.) appears with 12 issues per year and publishes papers in the field of optoelectronics, photonics, and new advanced materials (nonlinear optical materials, crystalline and non-crystalline materials, nano-structured materials, magnetic materials, functional and smart materials, materials based on polymers, biomaterials) of relevance for optoelectronics and photonics.
期刊最新文献
Fractal and fracture mechanics analyses of fatigue fracture surfaces of metallic materials Corrosion Behavior of Ni/Al2O3 and Ni/ZrO2 Nanocomposite Thin Films FT -IR and Raman spectroscopic studies of xAg2O-(100-x)[3B2O3·As2O3] glass system Xerographic spectroscopy of gap states: Se-rich amorphous semiconductors Fabrication of octyltriethoxysilane Langmuir-Blodgett thin film
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1