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Fractal and fracture mechanics analyses of fatigue fracture surfaces of metallic materials 金属材料疲劳断口的分形及断裂力学分析
IF 0.5 4区 材料科学 Q4 Engineering Pub Date : 2013-04-03 DOI: 10.1299/KIKAIA.66.2183
T. Sakai
In this study, fatigue crack propagation tests were performed to obtain fatigue fracture surfaces on compact tension type specimens of A5052 aluminum alloy and S25C carbon steel. The fatigue fracture surfaces were observed using a scanning laser microscope system. Based on the digital data thus obtained, an imaginary fracture surface was reconstructed in a three-dimensional (3D) space using a personal computer. Fractal analysis proposed by Mandelbrot was applied to such 3D surfaces and a hyperbola model was accepted to represent the Richardson effect. Because of the Richardson effect thus analyzed, fractal features were distinguished in the fracture surface irregularity. Results demonstrated that the geometrical irregularity of the surface was well evaluated by combining the fractal dimension and additional indices termed as "indices of fracture surface nature", and that the fractal dimension and the additional indices were associated with the stress intensity factor range of AK.
本研究对A5052铝合金和S25C碳钢致密拉伸型试样进行疲劳裂纹扩展试验,获得疲劳断口表面。采用扫描激光显微镜对疲劳断口进行了观察。基于所获得的数字数据,利用个人计算机在三维空间中重建了一个假想的裂缝面。将Mandelbrot提出的分形分析应用于此类三维曲面,并采用双曲线模型来表示Richardson效应。由于分析了理查德森效应,裂缝表面不规则性具有分形特征。结果表明,分形维数与附加指标“断裂面性质指标”相结合可以很好地评价断裂面的几何不规则性,且分形维数和附加指标与AK应力强度因子范围相关。
{"title":"Fractal and fracture mechanics analyses of fatigue fracture surfaces of metallic materials","authors":"T. Sakai","doi":"10.1299/KIKAIA.66.2183","DOIUrl":"https://doi.org/10.1299/KIKAIA.66.2183","url":null,"abstract":"In this study, fatigue crack propagation tests were performed to obtain fatigue fracture surfaces on compact tension type specimens of A5052 aluminum alloy and S25C carbon steel. The fatigue fracture surfaces were observed using a scanning laser microscope system. Based on the digital data thus obtained, an imaginary fracture surface was reconstructed in a three-dimensional (3D) space using a personal computer. Fractal analysis proposed by Mandelbrot was applied to such 3D surfaces and a hyperbola model was accepted to represent the Richardson effect. Because of the Richardson effect thus analyzed, fractal features were distinguished in the fracture surface irregularity. Results demonstrated that the geometrical irregularity of the surface was well evaluated by combining the fractal dimension and additional indices termed as \"indices of fracture surface nature\", and that the fractal dimension and the additional indices were associated with the stress intensity factor range of AK.","PeriodicalId":16679,"journal":{"name":"Journal of Optoelectronics and Advanced Materials","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2013-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1299/KIKAIA.66.2183","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"66360893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Corrosion Behavior of Ni/Al2O3 and Ni/ZrO2 Nanocomposite Thin Films Ni/Al2O3和Ni/ZrO2纳米复合薄膜的腐蚀行为
IF 0.5 4区 材料科学 Q4 Engineering Pub Date : 2011-04-19 DOI: 10.5772/13844
G. Constantin, Stasi Iuliana-Valentina, Lalau Cornel-Constantin
The addition of alumina and zirconia nanoparticles into nickel plating bath induces changes in the surface morphology and in the preferred crystallographic orientation of the nanocomposite thin layers electrodeposited on cooper substrates. The typical morphology for nickel deposits is pyramidal, but the addition of alumina particles in concentrations between 5 g/l and 10 g/l changes this morphology to hemispherical. The behavior of prepared Ni/Al 2 O 3 and Ni/ZrO 2 nanocomposite thin layers during corroding process in various solutions was investigated by using polarization curve, impedance spectroscopy, and Mott-Schottky techniques. The experimental results indicate the beneficial roles of alumina and zirconia nanoparticles on nanocomposite materials.
在镀镍液中加入氧化铝和氧化锆纳米粒子,可以改变铜基上电沉积的纳米复合材料薄层的表面形貌和首选晶体取向。镍镀层的典型形貌为金字塔形,但加入浓度在5 ~ 10 g/l之间的氧化铝颗粒后,这种形貌变为半球形。采用极化曲线、阻抗谱和Mott-Schottky技术研究了制备的Ni/ al2o3和Ni/ zro2纳米复合材料薄层在不同溶液中的腐蚀行为。实验结果表明,氧化铝和氧化锆纳米颗粒在纳米复合材料中的有益作用。
{"title":"Corrosion Behavior of Ni/Al2O3 and Ni/ZrO2 Nanocomposite Thin Films","authors":"G. Constantin, Stasi Iuliana-Valentina, Lalau Cornel-Constantin","doi":"10.5772/13844","DOIUrl":"https://doi.org/10.5772/13844","url":null,"abstract":"The addition of alumina and zirconia nanoparticles into nickel plating bath induces changes in the surface morphology and in the preferred crystallographic orientation of the nanocomposite thin layers electrodeposited on cooper substrates. The typical morphology for nickel deposits is pyramidal, but the addition of alumina particles in concentrations between 5 g/l and 10 g/l changes this morphology to hemispherical. The behavior of prepared Ni/Al 2 O 3 and Ni/ZrO 2 nanocomposite thin layers during corroding process in various solutions was investigated by using polarization curve, impedance spectroscopy, and Mott-Schottky techniques. The experimental results indicate the beneficial roles of alumina and zirconia nanoparticles on nanocomposite materials.","PeriodicalId":16679,"journal":{"name":"Journal of Optoelectronics and Advanced Materials","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2011-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.5772/13844","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"70919539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
FT -IR and Raman spectroscopic studies of xAg2O-(100-x)[3B2O3·As2O3] glass system xAg2O-(100-x)[3B2O3·As2O3]玻璃体系的红外光谱和拉曼光谱研究
IF 0.5 4区 材料科学 Q4 Engineering Pub Date : 2010-01-10 DOI: 10.1142/S0217984910022172
S. C. Baidoc, I. Ardelean
Structural analysis of xAg20(100-x)[3B 2 O 3 ·As 2 O 3 ] glass system, with 0 ≤ x ≤ 10 mol%, was performed by means of FT - IR and Raman spectroscopies. The purpose of this work is to investigate the structural changes that appear in the 3B 2 O3·As 2 O 3 glass matrix with the addition and increasing of silver ions content. Boroxol rings, pyro-, ortho-, di-, tri-, tetraand penta-borate groups and structural units characteristic to As 2 O 3 were found in the structure of the studied glasses. At small silver oxide content the predominant structural units are those in which boron is three-fold coordinated. For higher silver oxide concentrations (x ≥ 5 mol%) the number of four-fold coordinated boron units is increasing. The changes in the A r = A 4 /A 3 (A 4 and A 3 reflect the relative amount of tetrahedral (BO 4 and B∅ - 4 ) and triangular (BO 3 and BO 2 O - ) borate species) ratio also shows the fact that silver oxide influence the boron coordination number. The Raman analysis leads to similar conclusions as FT- IR measurements.
用红外光谱和拉曼光谱对0≤x≤10 mol%的xAg20(100-x)[3B 2o3·As 2o3]玻璃体系进行了结构分析。本研究的目的是研究随着银离子的添加和增加,3B o2·As o2玻璃基体的结构变化。硼砂环、热硼酸、邻硼酸、二硼酸、三硼酸、四硼酸和五硼酸基团以及具有as2o3特征的结构单元均存在于所研究的玻璃结构中。在氧化银含量小的情况下,主要的结构单元是那些硼是三重配位的结构单元。当氧化银浓度较高(x≥5 mol%)时,四重配位硼单元的数量增加。A r = A 4 /A 3 (A 4和A 3反映了四面体(bo4和B∅- 4)和三角形(bo3和bo2o -)硼酸盐种类的相对数量)比的变化也表明氧化银影响硼配位数的事实。拉曼分析得出了与FT- IR测量相似的结论。
{"title":"FT -IR and Raman spectroscopic studies of xAg2O-(100-x)[3B2O3·As2O3] glass system","authors":"S. C. Baidoc, I. Ardelean","doi":"10.1142/S0217984910022172","DOIUrl":"https://doi.org/10.1142/S0217984910022172","url":null,"abstract":"Structural analysis of xAg20(100-x)[3B 2 O 3 ·As 2 O 3 ] glass system, with 0 ≤ x ≤ 10 mol%, was performed by means of FT - IR and Raman spectroscopies. The purpose of this work is to investigate the structural changes that appear in the 3B 2 O3·As 2 O 3 glass matrix with the addition and increasing of silver ions content. Boroxol rings, pyro-, ortho-, di-, tri-, tetraand penta-borate groups and structural units characteristic to As 2 O 3 were found in the structure of the studied glasses. At small silver oxide content the predominant structural units are those in which boron is three-fold coordinated. For higher silver oxide concentrations (x ≥ 5 mol%) the number of four-fold coordinated boron units is increasing. The changes in the A r = A 4 /A 3 (A 4 and A 3 reflect the relative amount of tetrahedral (BO 4 and B∅ - 4 ) and triangular (BO 3 and BO 2 O - ) borate species) ratio also shows the fact that silver oxide influence the boron coordination number. The Raman analysis leads to similar conclusions as FT- IR measurements.","PeriodicalId":16679,"journal":{"name":"Journal of Optoelectronics and Advanced Materials","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2010-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1142/S0217984910022172","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"63863841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Experimental study of two-step growth of thin AlN film on 4H-SiC substrate by Metalorganic Chemical Vapor Deposition 金属有机化学气相沉积在4H-SiC衬底上两步生长AlN薄膜的实验研究
IF 0.5 4区 材料科学 Q4 Engineering Pub Date : 2010-01-01 DOI: 10.5072/ZENODO.38088
Hongbo Yu, M. Ozturk, P. Demirel, H. Çakmak, T. Buyuklimanli, W. Ou, E. Ozbay
We report growth optimizations of the thin AIN film on (0001) 4H-SiC substrates by metalorganic chemical vapor deposition. The influence of growth conditions, such as growth temperature and the V/III molar ratio, on the material quality of AIN film is studied. The surface morphology and crystalline quality of the epitaxial layers are investigated by atomic force microscope, X-ray diffraction, and transmission electronic microscope. A new approach is demonstrated to improve the crystalline quality of a 100 nm-thick AIN film by the use of a 5 nm-thick low temperature AIN nucleation layer. Compared to a conventional AIN layer directly grown on SiC substrate at high temperature, the surface morphology of two-step AIN film is remarkably improved along with a decreasing of defect density, leading to the improvement of crystalline quality for the subsequently grown GaN layer. The mechanisms of crystalline quality improvement by use of a low temperature AIN nucleation layer are also investigated and discussed.
我们报告了金属有机化学气相沉积在(0001)4H-SiC衬底上的AIN薄膜的生长优化。研究了生长温度、V/III摩尔比等生长条件对AIN薄膜材料质量的影响。采用原子力显微镜、x射线衍射和透射电镜对外延层的表面形貌和结晶质量进行了研究。提出了一种利用5纳米厚的低温氮化镓成核层来改善100纳米厚氮化镓薄膜结晶质量的新方法。与直接在SiC衬底上高温生长的传统AIN层相比,两步AIN膜的表面形貌随着缺陷密度的降低而显著改善,从而改善了随后生长的GaN层的结晶质量。本文还对低温氮化铝成核层改善结晶质量的机理进行了探讨。
{"title":"Experimental study of two-step growth of thin AlN film on 4H-SiC substrate by Metalorganic Chemical Vapor Deposition","authors":"Hongbo Yu, M. Ozturk, P. Demirel, H. Çakmak, T. Buyuklimanli, W. Ou, E. Ozbay","doi":"10.5072/ZENODO.38088","DOIUrl":"https://doi.org/10.5072/ZENODO.38088","url":null,"abstract":"We report growth optimizations of the thin AIN film on (0001) 4H-SiC substrates by metalorganic chemical vapor deposition. The influence of growth conditions, such as growth temperature and the V/III molar ratio, on the material quality of AIN film is studied. The surface morphology and crystalline quality of the epitaxial layers are investigated by atomic force microscope, X-ray diffraction, and transmission electronic microscope. A new approach is demonstrated to improve the crystalline quality of a 100 nm-thick AIN film by the use of a 5 nm-thick low temperature AIN nucleation layer. Compared to a conventional AIN layer directly grown on SiC substrate at high temperature, the surface morphology of two-step AIN film is remarkably improved along with a decreasing of defect density, leading to the improvement of crystalline quality for the subsequently grown GaN layer. The mechanisms of crystalline quality improvement by use of a low temperature AIN nucleation layer are also investigated and discussed.","PeriodicalId":16679,"journal":{"name":"Journal of Optoelectronics and Advanced Materials","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2010-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"70792405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
The electrical characteristics of Cu/CuS/p-Si/Al structure Cu/Cu /p-Si/Al结构的电学特性
IF 0.5 4区 材料科学 Q4 Engineering Pub Date : 2010-01-01 DOI: 10.5072/ZENODO.34426
A. Ates, M. Saglam, B. Güzeldir, M. Yıldırım, Aykut Astam
Cu/CuS/p-Si/Al structure formed using CuS thin film on p-Si substrate. CuS thin film has been grown with using Successive Ionic Layer Adsorption and Reaction (SILAR) method. The Cu/CuS/p-Si/Al structure has demonstrated clearly rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The characteristic parameters such as barrier height, ideality factor and series resistance of Cu/CuS/p-Si/Al structure have been calculated from the forward bias I-V and reverse bias C -2 -V characteristics. The ideality factor and barrier height have been obtained as n=1.63 and Φ b =0.69 eV by applying a thermo-ionic emission theory. At high current densities in the forward direction, the series resistance effect has been observed. The values of R s obtained from dV/d(InI) - / and H(I) - / plots are near to each others (R s =340.33 □ and R s =346.24 □, respectively). In the same way, the barrier height calculated from C -2 -V characteristics have been varied from 0.523 to 0.601 eV. Furthermore, the density distribution of interface states of the multilayer device has been obtained from the semi-log forward bias I-V characteristics. It has been seen that the N ss has almost an exponential rise with bias voltage from top of the valance band toward to mid gap.
利用Cu薄膜在p-Si衬底上形成Cu/Cu /p-Si/Al结构。采用连续离子层吸附反应(SILAR)法制备了cu薄膜。室温下的电流-电压(I-V)曲线表明,Cu/Cu /p-Si/Al结构具有明显的整流行为。从正向偏置I-V和反向偏置C -2 -V特性出发,计算了Cu/Cu /p-Si/Al结构的势垒高度、理想因数和串联电阻等特性参数。应用热离子发射理论得到理想因子n=1.63,势垒高度Φ b =0.69 eV。在正向高电流密度下,观察到串联电阻效应。dV/d(InI) - /和H(I) - /样地的R s接近,R s分别为340.33□和346.24□。同样,由C -2 -V特性计算出的势垒高度从0.523 eV变化到0.601 eV。利用半对数正偏I-V特性,得到了多层器件界面态的密度分布。从价带顶部到中间间隙,随着偏置电压的增加,nss几乎呈指数增长。
{"title":"The electrical characteristics of Cu/CuS/p-Si/Al structure","authors":"A. Ates, M. Saglam, B. Güzeldir, M. Yıldırım, Aykut Astam","doi":"10.5072/ZENODO.34426","DOIUrl":"https://doi.org/10.5072/ZENODO.34426","url":null,"abstract":"Cu/CuS/p-Si/Al structure formed using CuS thin film on p-Si substrate. CuS thin film has been grown with using Successive Ionic Layer Adsorption and Reaction (SILAR) method. The Cu/CuS/p-Si/Al structure has demonstrated clearly rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The characteristic parameters such as barrier height, ideality factor and series resistance of Cu/CuS/p-Si/Al structure have been calculated from the forward bias I-V and reverse bias C -2 -V characteristics. The ideality factor and barrier height have been obtained as n=1.63 and Φ b =0.69 eV by applying a thermo-ionic emission theory. At high current densities in the forward direction, the series resistance effect has been observed. The values of R s obtained from dV/d(InI) - / and H(I) - / plots are near to each others (R s =340.33 □ and R s =346.24 □, respectively). In the same way, the barrier height calculated from C -2 -V characteristics have been varied from 0.523 to 0.601 eV. Furthermore, the density distribution of interface states of the multilayer device has been obtained from the semi-log forward bias I-V characteristics. It has been seen that the N ss has almost an exponential rise with bias voltage from top of the valance band toward to mid gap.","PeriodicalId":16679,"journal":{"name":"Journal of Optoelectronics and Advanced Materials","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2010-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"70790866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Xerographic spectroscopy of gap states: Se-rich amorphous semiconductors 间隙态的静电光谱学:富硒非晶半导体
IF 0.5 4区 材料科学 Q4 Engineering Pub Date : 2010-01-01 DOI: 10.1016/B978-0-12-388429-9.00005-4
V. Mikla
{"title":"Xerographic spectroscopy of gap states: Se-rich amorphous semiconductors","authors":"V. Mikla","doi":"10.1016/B978-0-12-388429-9.00005-4","DOIUrl":"https://doi.org/10.1016/B978-0-12-388429-9.00005-4","url":null,"abstract":"","PeriodicalId":16679,"journal":{"name":"Journal of Optoelectronics and Advanced Materials","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2010-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"54077426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication of octyltriethoxysilane Langmuir-Blodgett thin film 辛烷基三乙氧基硅烷Langmuir-Blodgett薄膜的制备
IF 0.5 4区 材料科学 Q4 Engineering Pub Date : 2010-01-01 DOI: 10.5072/ZENODO.33162
Keziban Can, Mustafa Ozmen, L. Gurfidan, I. H. Gubbuk, E. Kaymak, M. Ersoz, Z. Ozbek, R. Çapan
In the present work the monolayer properties at the air-water interface of Octyltriethoxysilane (C 8 TES) molecules are investigated using Langmuir isotherm graphs. Uniform and high quality Langmuir-Blodgett films of these molecules are prepared and characterized by UV-visible, atomic force microscopy and quartz crystal microbalance measurements to determine the deposition quality of these films. High transfer ratio of about 0.99 at a deposition pressure of 11 mN/m was obtained. The contact angle of water was 93.17° with a surface free energy of 23.8 mN/m. The use of soluble triethoxybased silane coupling agents under anhydrous conditions is shown to produce surfaces with a minimal number of surface defects. C 8 TES material has been demonstrated to produce well organised LB films and is shown to be a good candidate for application in the field of biosensors.
本文用Langmuir等温线图研究了c8tes分子在空气-水界面的单层性质。制备了这些分子均匀、高质量的Langmuir-Blodgett薄膜,并通过紫外可见、原子力显微镜和石英晶体微天平测量对其进行了表征,以确定这些薄膜的沉积质量。在11mn /m的沉积压力下获得了0.99左右的高传递比。水的接触角为93.17°,表面自由能为23.8 mN/m。在无水条件下使用可溶性三乙氧基硅烷偶联剂可以产生表面缺陷最少的表面。c8 TES材料已被证明可以产生组织良好的LB膜,并被证明是生物传感器领域应用的良好候选者。
{"title":"Fabrication of octyltriethoxysilane Langmuir-Blodgett thin film","authors":"Keziban Can, Mustafa Ozmen, L. Gurfidan, I. H. Gubbuk, E. Kaymak, M. Ersoz, Z. Ozbek, R. Çapan","doi":"10.5072/ZENODO.33162","DOIUrl":"https://doi.org/10.5072/ZENODO.33162","url":null,"abstract":"In the present work the monolayer properties at the air-water interface of Octyltriethoxysilane (C 8 TES) molecules are investigated using Langmuir isotherm graphs. Uniform and high quality Langmuir-Blodgett films of these molecules are prepared and characterized by UV-visible, atomic force microscopy and quartz crystal microbalance measurements to determine the deposition quality of these films. High transfer ratio of about 0.99 at a deposition pressure of 11 mN/m was obtained. The contact angle of water was 93.17° with a surface free energy of 23.8 mN/m. The use of soluble triethoxybased silane coupling agents under anhydrous conditions is shown to produce surfaces with a minimal number of surface defects. C 8 TES material has been demonstrated to produce well organised LB films and is shown to be a good candidate for application in the field of biosensors.","PeriodicalId":16679,"journal":{"name":"Journal of Optoelectronics and Advanced Materials","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2010-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"70790817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optical and Holographic Characteristics of Photopolymer Layers 光聚合物层的光学和全息特性
IF 0.5 4区 材料科学 Q4 Engineering Pub Date : 2009-01-01 DOI: 10.21427/D7XW42
T. Yovcheva, I. Naydenova, I. Vlaeva, S. Martin, V. Toal, S. Sainov
The present work studies the optical and holographic characteristics of acrylamide-based photopolymer layers. The refractive index change of a liquid acrylamide photopolymer due to exposure at 532 nm is obtained for the first time, using a critical angle laser micro-refractometer. The 30 μm thick solid photopolymer films are prepared by casting on glass substrates. Bragg holographic gratings with spatial frequencies of 710 mm -1 , 1050 mm -1 and 1600 mm -1 are recorded using a diode laser operating at 532 nm wavelength. We investigate the dependence of the diffraction efficiency on the exposure energy. The obtained results are compared with the Stetson holographic recording method, where two gratings are simultaneously recorded in the same location with spatial frequencies of 2020 mm -1 and 3670 mm -1 , using a totally reflected reference wave from the air-photopolymer interface. Despite the fact that in the latter method the two gratings share the same dynamic range, higher diffraction efficiencies are observed.
本文研究了丙烯酰胺基光聚合物层的光学和全息特性。利用临界角度激光微折射仪,首次获得了液体丙烯酰胺光聚合物在532 nm处曝光后的折射率变化。在玻璃基板上采用浇铸法制备了30 μm厚的固体光聚合物薄膜。利用波长为532 nm的二极管激光器记录了空间频率为710 mm -1、1050 mm -1和1600 mm -1的Bragg全息光栅。我们研究了衍射效率与曝光能量的关系。利用来自空气-光聚合物界面的全反射参考波,在同一位置同时记录两个光栅,空间频率分别为2020 mm -1和3670 mm -1,并将所得结果与Stetson全息记录方法进行了比较。尽管在后一种方法中,两个光栅具有相同的动态范围,但观察到更高的衍射效率。
{"title":"Optical and Holographic Characteristics of Photopolymer Layers","authors":"T. Yovcheva, I. Naydenova, I. Vlaeva, S. Martin, V. Toal, S. Sainov","doi":"10.21427/D7XW42","DOIUrl":"https://doi.org/10.21427/D7XW42","url":null,"abstract":"The present work studies the optical and holographic characteristics of acrylamide-based photopolymer layers. The refractive index change of a liquid acrylamide photopolymer due to exposure at 532 nm is obtained for the first time, using a critical angle laser micro-refractometer. The 30 μm thick solid photopolymer films are prepared by casting on glass substrates. Bragg holographic gratings with spatial frequencies of 710 mm -1 , 1050 mm -1 and 1600 mm -1 are recorded using a diode laser operating at 532 nm wavelength. We investigate the dependence of the diffraction efficiency on the exposure energy. The obtained results are compared with the Stetson holographic recording method, where two gratings are simultaneously recorded in the same location with spatial frequencies of 2020 mm -1 and 3670 mm -1 , using a totally reflected reference wave from the air-photopolymer interface. Despite the fact that in the latter method the two gratings share the same dynamic range, higher diffraction efficiencies are observed.","PeriodicalId":16679,"journal":{"name":"Journal of Optoelectronics and Advanced Materials","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2009-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67752199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tunneling magneto-resistance granular thin films deposited by thermo-ionic vacuum arc technique 热离子真空电弧技术沉积隧道磁阻颗粒薄膜
IF 0.5 4区 材料科学 Q4 Engineering Pub Date : 2008-01-01 DOI: 10.1088/1742-6596/100/8/082026
I Mustata, A Anghel, C P Lungu, O Pompilian, V Kuncser, G Schinteie
: Co-MgO granular films presenting TMR effects were prepared by thermo-ionic vacuum arc (TVA) method with the simultaneous ignition of plasma in Co and MgO vapors, respectively. The processing method is suitable for the simultaneous preparation of films of different relative content of Co in the MgO insulating matrix. Morphologic, structural and magnetic behaviors were analyzed in as prepared and annealed samples. The influence of the Co content on the magnetic properties of the prepared films was analyzed, in correlation with tunneling magneto-resistance effects. The tunneling magneto-resistance effect is maximal for certain Co content. This behavior was interpreted by the contrary effects of decreasing the average size of the magnetic grains, and hence the average inter-grains distance at higher Co relative content, and the enhanced magnetic disorder in very fine grains dispersed in the insulating matrix. This mechanism was suggested by the comportment of as prepared and thermally annealed samples.
采用热离子真空电弧(TVA)法,分别在Co和MgO蒸气中同时点燃等离子体,制备了具有TMR效应的Co-MgO颗粒膜。该方法适用于MgO绝缘基体中不同Co相对含量的薄膜的同时制备。对制备和退火后的样品进行了形貌、结构和磁性行为分析。分析了Co含量对所制备薄膜磁性能的影响,并与隧道磁阻效应进行了相关分析。当Co含量一定时,隧道磁阻效应最大。这种行为可以解释为磁性晶粒的平均尺寸减小,从而降低了Co相对含量较高时的平均晶粒间距,并增强了分散在绝缘基体中的极细晶粒的磁性无序性。通过制备样品和热退火样品的性能分析,证实了这一机理。
{"title":"Tunneling magneto-resistance granular thin films deposited by thermo-ionic vacuum arc technique","authors":"I Mustata, A Anghel, C P Lungu, O Pompilian, V Kuncser, G Schinteie","doi":"10.1088/1742-6596/100/8/082026","DOIUrl":"https://doi.org/10.1088/1742-6596/100/8/082026","url":null,"abstract":": Co-MgO granular films presenting TMR effects were prepared by thermo-ionic vacuum arc (TVA) method with the simultaneous ignition of plasma in Co and MgO vapors, respectively. The processing method is suitable for the simultaneous preparation of films of different relative content of Co in the MgO insulating matrix. Morphologic, structural and magnetic behaviors were analyzed in as prepared and annealed samples. The influence of the Co content on the magnetic properties of the prepared films was analyzed, in correlation with tunneling magneto-resistance effects. The tunneling magneto-resistance effect is maximal for certain Co content. This behavior was interpreted by the contrary effects of decreasing the average size of the magnetic grains, and hence the average inter-grains distance at higher Co relative content, and the enhanced magnetic disorder in very fine grains dispersed in the insulating matrix. This mechanism was suggested by the comportment of as prepared and thermally annealed samples.","PeriodicalId":16679,"journal":{"name":"Journal of Optoelectronics and Advanced Materials","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2008-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1088/1742-6596/100/8/082026","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"60590465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of thin film bulk acoustic wave resonators and ladder-type filter design 薄膜体声波谐振器的建模与梯形滤波器设计
IF 0.5 4区 材料科学 Q4 Engineering Pub Date : 2007-09-01 DOI: 10.1142/9789812770165_0037
Y. Chen
In this paper, PSPICE is implemented to model and simulate the characteristic of thin film bulk acoustic resonator (FBAR). Both analogy equivalent circuits of Acoustic transmission line and Mason model is proposed and transferred to the PSPICE model by using the controlled-source method. The physical parameters such as piezoelectric materials and its thickness, electrode material, area and its thickness affecting the properties of the FBAS are discussed. Finally, we have implemented the FBAR to design a ladder type filter with a center frequency at 1.1 GHz and bandwidth about 60.9%. The study results in that PSPICE is an effective tool for the FBAR modeling and ladder type filter design.
本文利用PSPICE对薄膜体声谐振器(FBAR)的特性进行建模和仿真。提出了声传输线和梅森模型的类比等效电路,并采用控源方法将其转换为PSPICE模型。讨论了压电材料及其厚度、电极材料、电极面积及其厚度等物理参数对FBAS性能的影响。最后,我们实现了FBAR,设计了一个中心频率为1.1 GHz,带宽约为60.9%的梯形滤波器。研究结果表明,PSPICE是FBAR建模和梯形滤波器设计的有效工具。
{"title":"Modeling of thin film bulk acoustic wave resonators and ladder-type filter design","authors":"Y. Chen","doi":"10.1142/9789812770165_0037","DOIUrl":"https://doi.org/10.1142/9789812770165_0037","url":null,"abstract":"In this paper, PSPICE is implemented to model and simulate the characteristic of thin film bulk acoustic resonator (FBAR). Both analogy equivalent circuits of Acoustic transmission line and Mason model is proposed and transferred to the PSPICE model by using the controlled-source method. The physical parameters such as piezoelectric materials and its thickness, electrode material, area and its thickness affecting the properties of the FBAS are discussed. Finally, we have implemented the FBAR to design a ladder type filter with a center frequency at 1.1 GHz and bandwidth about 60.9%. The study results in that PSPICE is an effective tool for the FBAR modeling and ladder type filter design.","PeriodicalId":16679,"journal":{"name":"Journal of Optoelectronics and Advanced Materials","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1142/9789812770165_0037","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64023277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
期刊
Journal of Optoelectronics and Advanced Materials
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