{"title":"Observation and characterization of near-interface oxide traps in 3C-SiC MOS structures by quasi-static I–V method","authors":"A. Constant, P. Godignon","doi":"10.1016/j.sse.2011.04.015","DOIUrl":null,"url":null,"abstract":"<div><p><span>The electrical properties of oxides grown on 3C-SiC by rapid thermal processing in various oxidizing and annealing atmospheres are investigated using a quasi-static method. According to the anomalous capacitance hump, the existence of two types of traps, interface and near interface oxide traps, is observed in quasi-static. By monitoring the sweep-rate measurement of the quasi-static current related to electron tunneling from interface traps to near-interface oxide traps, a profile of the traps in response time can be obtained. Based on the extracted parameters of the carrier traps, we demonstrate that the near SiO</span><sub>2</sub>/3C-SiC interface is significantly improved when using 100% N<sub>2</sub>O compared to 100% O<sub>2</sub> or even N<sub>2</sub>–O<sub>2</sub> dilution as oxidizing gas. Also, we show that incorporating N<sub>2</sub> during the oxidation in O<sub>2</sub> is not favourable for the reduction of the near-interface oxide traps.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"63 1","pages":"Pages 70-75"},"PeriodicalIF":1.4000,"publicationDate":"2011-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.sse.2011.04.015","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110111001493","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 2
Abstract
The electrical properties of oxides grown on 3C-SiC by rapid thermal processing in various oxidizing and annealing atmospheres are investigated using a quasi-static method. According to the anomalous capacitance hump, the existence of two types of traps, interface and near interface oxide traps, is observed in quasi-static. By monitoring the sweep-rate measurement of the quasi-static current related to electron tunneling from interface traps to near-interface oxide traps, a profile of the traps in response time can be obtained. Based on the extracted parameters of the carrier traps, we demonstrate that the near SiO2/3C-SiC interface is significantly improved when using 100% N2O compared to 100% O2 or even N2–O2 dilution as oxidizing gas. Also, we show that incorporating N2 during the oxidation in O2 is not favourable for the reduction of the near-interface oxide traps.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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