Tunneling magneto-resistance granular thin films deposited by thermo-ionic vacuum arc technique

IF 0.6 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Journal of Optoelectronics and Advanced Materials Pub Date : 2008-01-01 DOI:10.1088/1742-6596/100/8/082026

I Mustata, A Anghel, C P Lungu, O Pompilian, V Kuncser, G Schinteie

{"title":"Tunneling magneto-resistance granular thin films deposited by thermo-ionic vacuum arc technique","authors":"I Mustata, A Anghel, C P Lungu, O Pompilian, V Kuncser, G Schinteie","doi":"10.1088/1742-6596/100/8/082026","DOIUrl":null,"url":null,"abstract":": Co-MgO granular films presenting TMR effects were prepared by thermo-ionic vacuum arc (TVA) method with the simultaneous ignition of plasma in Co and MgO vapors, respectively. The processing method is suitable for the simultaneous preparation of films of different relative content of Co in the MgO insulating matrix. Morphologic, structural and magnetic behaviors were analyzed in as prepared and annealed samples. The influence of the Co content on the magnetic properties of the prepared films was analyzed, in correlation with tunneling magneto-resistance effects. The tunneling magneto-resistance effect is maximal for certain Co content. This behavior was interpreted by the contrary effects of decreasing the average size of the magnetic grains, and hence the average inter-grains distance at higher Co relative content, and the enhanced magnetic disorder in very fine grains dispersed in the insulating matrix. This mechanism was suggested by the comportment of as prepared and thermally annealed samples.","PeriodicalId":16679,"journal":{"name":"Journal of Optoelectronics and Advanced Materials","volume":"100 1","pages":"082026"},"PeriodicalIF":0.6000,"publicationDate":"2008-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1088/1742-6596/100/8/082026","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Optoelectronics and Advanced Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1742-6596/100/8/082026","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

: Co-MgO granular films presenting TMR effects were prepared by thermo-ionic vacuum arc (TVA) method with the simultaneous ignition of plasma in Co and MgO vapors, respectively. The processing method is suitable for the simultaneous preparation of films of different relative content of Co in the MgO insulating matrix. Morphologic, structural and magnetic behaviors were analyzed in as prepared and annealed samples. The influence of the Co content on the magnetic properties of the prepared films was analyzed, in correlation with tunneling magneto-resistance effects. The tunneling magneto-resistance effect is maximal for certain Co content. This behavior was interpreted by the contrary effects of decreasing the average size of the magnetic grains, and hence the average inter-grains distance at higher Co relative content, and the enhanced magnetic disorder in very fine grains dispersed in the insulating matrix. This mechanism was suggested by the comportment of as prepared and thermally annealed samples.

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热离子真空电弧技术沉积隧道磁阻颗粒薄膜

采用热离子真空电弧(TVA)法，分别在Co和MgO蒸气中同时点燃等离子体，制备了具有TMR效应的Co-MgO颗粒膜。该方法适用于MgO绝缘基体中不同Co相对含量的薄膜的同时制备。对制备和退火后的样品进行了形貌、结构和磁性行为分析。分析了Co含量对所制备薄膜磁性能的影响，并与隧道磁阻效应进行了相关分析。当Co含量一定时，隧道磁阻效应最大。这种行为可以解释为磁性晶粒的平均尺寸减小，从而降低了Co相对含量较高时的平均晶粒间距，并增强了分散在绝缘基体中的极细晶粒的磁性无序性。通过制备样品和热退火样品的性能分析，证实了这一机理。

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来源期刊

Journal of Optoelectronics and Advanced Materials 工程技术-材料科学：综合

CiteScore

0.90

自引率

20.00%

发文量

审稿时长

6.5 months

期刊介绍： The Journal of Optoelectronics and Advanced Materials (J. Optoelectron. Adv. M.) appears with 12 issues per year and publishes papers in the field of optoelectronics, photonics, and new advanced materials (nonlinear optical materials, crystalline and non-crystalline materials, nano-structured materials, magnetic materials, functional and smart materials, materials based on polymers, biomaterials) of relevance for optoelectronics and photonics.