Growth and characterization of bimetallic (Ni,Co) sulfide thin films deposited by spray pyrolysis

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Chalcogenide Letters Pub Date : 2023-01-01 DOI:10.15251/cl.2023.205.377
A. Gahtar, C. Zaouche, A. Ammari, L. Dahbi
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Abstract

In this work, the bimetallic (Ni,Co) sulfide film of 852.213 nm thickness was successfully deposited using the spray pyrolysis technique at 300 °C. The compound was prepared with a mixture of nickel acetate (C4H6O4Ni. 4H2O), cobalt chloride (CoCl2. 6H2O), and thiourea (CS(NH2)2) as precursors for Ni, Co, and S, respectively. The temperature and sedimentation time were 300 °C and 10 min, respectively; the film was then, characterized without any thermal post-treatment. The structural, morphological, optical and electrical analysis were carried out to investigate the different properties of the material. The X-ray diffraction analysis confirmed the presence of NiCo2S4 according to the JCPDS Card # 98- 004-0019, with an average crystallite size of 34.45 nm. The optical analysis revealed the metallic behavior of the film with an average transmittance of 3.41% in the visible region and a direct optical band gap of 2.15 eV, as well as a high absorption coefficient of α ≈ 104 - 105 cm-1 ). The elementary composition analysis (EDS) confirmed the presence of Ni, Co and S elements in the film. Morphological analysis revealed a homogeneous, compact, crack-free appearance and a granular surface in all studied areas. On the other hand, the film shows a high electrical conductivity of about 1.42×105 S/cm at room temperature. The obtained results show that the bimetallic (Ni, Co) sulfide prepared in this study exhibits a good crystallinity, dense morphology, good stoichiometric ratio and high conductivity. Therefore, it is a potential candidate for application in supercapacitors as electrode material.
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喷雾热解沉积双金属(Ni,Co)硫化物薄膜的生长与表征
在300℃的高温下,采用喷雾热解技术成功制备了厚度为852.213 nm的双金属(Ni,Co)硫化膜。该化合物是用醋酸镍(C4H6O4Ni)的混合物制备的。4H2O),氯化钴(CoCl2)。6H2O)和硫脲(CS(NH2)2)分别作为Ni、Co和S的前驱体。温度为300℃,沉淀时间为10 min;然后,在没有任何热后处理的情况下对薄膜进行表征。对材料进行了结构、形态、光学和电学分析,研究了材料的不同性能。x射线衍射分析证实了NiCo2S4的存在,根据JCPDS卡# 98- 004-0019,平均晶粒尺寸为34.45 nm。光学分析表明,该薄膜在可见光区的平均透过率为3.41%,直接带隙为2.15 eV,具有较高的吸收系数α≈104 ~ 105 cm-1)。元素组成分析(EDS)证实薄膜中存在Ni、Co和S元素。形态学分析显示,所有研究区域均为均匀、致密、无裂纹的外观和颗粒状表面。另一方面,该薄膜在室温下表现出较高的电导率,约为1.42×105 S/cm。结果表明,本研究制备的双金属(Ni, Co)硫化物具有良好的结晶度、致密的形貌、良好的化学计量比和高的电导率。因此,它是一个潜在的候选应用在超级电容器作为电极材料。
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来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
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