{"title":"Characterization and electrochemical performance of Mn-doped Co3O4 nanoparticles for supercapacitor applications","authors":"A. Karthikeyan, R. Mariappan","doi":"10.1007/s10854-023-11493-5","DOIUrl":null,"url":null,"abstract":"<div><p>The innovative investigation into Mn:Co<sub>3</sub>O<sub>4</sub> samples through a multifaceted approach encompassing diverse characterization methodologies and electrochemical assessments. Employing X-ray diffraction, we unveiled the internal geometry and crystallite disposition, which impeccably matched the spinel-cubic structure of Co<sub>3</sub>O<sub>4</sub>. X-ray photoelectron spectroscopy analysis meticulously corroborated the existence of Co, Mn, and O elements while unveiling distinctive valence states for Co and Mn ions. On further analysis, scanning electron microscopy provides a visual insight into granular, hexagonal-shaped layered structures, with varying pore abundance among the all temperatures. The compositional integrity is confirmed through energy-dispersive X-ray spectroscopy. Electrochemical investigations encompass cyclic voltammetry (CV), galvanostatic charge–discharge (GCD), and electrochemical impedance spectroscopy (EIS). The CV curves exhibit redox peaks denoting pseudo-capacitive behavior, while GCD profiles display symmetric behavior. The specific capacitance at various scan rates highlights the superior performance of the Mn:Co<sub>3</sub>O<sub>4</sub> sample at 700 °C. EIS analyses affirm low interfacial charge resistance and accelerated ion diffusion. Cyclic stability assessment over 1500 cycles underscores the enduring process of Mn:Co<sub>3</sub>O<sub>4</sub> culminating in a favorable specific capacitance of 625 F/g and a remarkable capacity retention of 96% even after 1500 cycles.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"34 31","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2023-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-023-11493-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The innovative investigation into Mn:Co3O4 samples through a multifaceted approach encompassing diverse characterization methodologies and electrochemical assessments. Employing X-ray diffraction, we unveiled the internal geometry and crystallite disposition, which impeccably matched the spinel-cubic structure of Co3O4. X-ray photoelectron spectroscopy analysis meticulously corroborated the existence of Co, Mn, and O elements while unveiling distinctive valence states for Co and Mn ions. On further analysis, scanning electron microscopy provides a visual insight into granular, hexagonal-shaped layered structures, with varying pore abundance among the all temperatures. The compositional integrity is confirmed through energy-dispersive X-ray spectroscopy. Electrochemical investigations encompass cyclic voltammetry (CV), galvanostatic charge–discharge (GCD), and electrochemical impedance spectroscopy (EIS). The CV curves exhibit redox peaks denoting pseudo-capacitive behavior, while GCD profiles display symmetric behavior. The specific capacitance at various scan rates highlights the superior performance of the Mn:Co3O4 sample at 700 °C. EIS analyses affirm low interfacial charge resistance and accelerated ion diffusion. Cyclic stability assessment over 1500 cycles underscores the enduring process of Mn:Co3O4 culminating in a favorable specific capacitance of 625 F/g and a remarkable capacity retention of 96% even after 1500 cycles.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.