{"title":"Electric Field Accelerating Interface Diffusion in Cu/Ru/TaN/Si Stacks during Annealing","authors":"L. Wang, Z. Cao, J. Syed, K. Hu, Q. She, X. Meng","doi":"10.1149/2.023206ESL","DOIUrl":null,"url":null,"abstract":"Interface diffusion in Cu/Ru/TaN/Si stacks was investigated at different temperatures with and without electric field. It was found that electric field annealing accelerated the interface diffusion of Cu/Ru/TaN/Si. The accelerated interface diffusion is attributed to the accelerated mobility of vacancies and atoms by external electric field. A stronger accelerating effect was found on Ru/TaN interface, which resulted from accelerated N atom diffusion and the polarization of vacancies in TaN layer. © 2012 The Electrochemical Society. [DOI: 10.1149/2.023206esl] All rights reserved.","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"11 39","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1149/2.023206ESL","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrochemical and Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.023206ESL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
退火过程中电场加速Cu/Ru/TaN/Si堆叠界面扩散
研究了Cu/Ru/TaN/Si叠层在不同温度下的界面扩散。发现电场退火加速了Cu/Ru/TaN/Si的界面扩散。界面扩散的加速是由于外加电场加速了空位和原子的迁移。在Ru/TaN界面上发现了更强的加速效应，这是由于N原子的加速扩散和TaN层中空位的极化所致。©2012电化学学会。[DOI: 10.1149/2.023206]版权所有。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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