Rectangular Polysilicon Nanowires by Top-Down Lithography, Dry Etch and Metal-Induced Lateral Crystallization

Abstract

In this work, we demonstrate a low temperature polysilicon nanowire fabrication process using amorphous silicon deposition over an oxide pillar, anisotropic reactive ion etch and metal-induced lateral crystallization (MILC). The fabricated nanowires are rectangular, with a width and height of around 100 nm. MILC is successfully achieved at temperatures down to 450oC, making the process compatible with glass substrates and hence suitable for low cost, disposable biosensors. Crystallisation lengths of 4.1 µm and 0.8 µm are obtained for 15 hour anneals at 480oC and 450oC, respectively.