Youngkyu Song, Chulhyun Park, J. Kang, I. Sohn, Y. Noh, Jongmin Lee, Eungjang Lee, Seung-Han Park, Soogil Lee, Jongill Hong, I. Yun
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引用次数: 0
Abstract
The effects of laser drilling through silicon substrate formed by femtosecond laser on n-type MOSFET device characteristics are investigated. The tested MOSFET device structures are fabricated using the commercial 130-nm process. Through via holes and laser scanning line affect the device characteristics, such as drain current and threshold voltage, depending on the distance between the location of the drilling. The device degradation and variation along with a distance from the holes or the line are examined and the device characteristic variation is analyzed to determine the reliability of MOSFET devices against laser drilling damage.
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